gate oxide [电子] 栅氧化层 ; 闸极氧化层 ; 以及氧化栅极 ; 门氧化物
gate oxide defect 栅氧化层缺陷
gate oxide integrity 栅极氧化层的完整性 ; 完整性 ; 门氧化层完整性
Gate oxide Furnace 门极氧化炉
thin gate oxide [电子] 薄栅氧化层
gate oxide leakage 栅氧化层泄漏
dual gate oxide 双栅氧 ; 提出了一种新的双栅氧
A high electrical field apparently developed across the gate-oxide of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) during plasma processing. This high electric field leads to gate oxide breakdown or wear-out (lifetime shortening).
在等离子体工艺中,MOSFET的栅氧化膜上存在较高的电场应力,进而使得栅氧击穿或失效(寿命缩短)。
参考来源 - 等离子工艺引起的栅氧化膜充电损伤机理研究·2,447,543篇论文数据，部分数据来源于NoteExpress
以上来源于: WordNet
TDDB(time-dependent dielectric breakdown)is a key method to value the quality of thin gate oxide.
经时绝缘击穿（TDDB）是评价薄栅氧化层质量的重要方法。
The first important thin film from the thermal oxide group is the gate oxide layer under which a conducting channel can be formed between the source and the drain.
第一个重要的来自热氧化组薄膜是栅氧化层，在它之下，源和漏之间就能形成导电通道。
Also, High electric field annealing of stressed PMOSFET and detrapping of trapped electrons on the gate oxide are studied deeply.
重点研究了退化PMOS器件的高场退火效应和氧化层陷阱电子的退陷阱机制。
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