gate-oxide leakage current 栅氧化层漏电流
Secondly, the transient characteristics of FN tunneling and hot hole (HH) stress induced leakage current (SILC) in ultra-thin gate oxide are investigated respectively in this dissertation.
其次,本文分别研究了FN隧穿应力和热空穴(HH)应力导致的超薄栅氧化层漏电流瞬态特性。
However, when oxide thickness increased to a fixed value at a specific oxide field, the increase in gate leakage current caused by a single oxygen vacancy could be neglected.
但当厚度在特定值及特定电场下时,单个氧空位引起的栅漏电流增加可以忽略。
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