Si-substrate 硅基
on si substrate 硅基片上
HR-Si substrate 高阻硅衬底
high-resistivity Si substrate 高阻率硅衬底
heavily B-doped Si substrate 重掺硼硅衬底
si-substrate integrated circuits 硅基集成电路
low-resistivity silicon lr-si substrate 低阻硅衬底
substrate si si衬底
si and wc-co substrate 硅和硬质合金基体
As operation frequency and integration improved,RF circuits on low resistivity Si substrate perform poorer because of high energy loss and serious crosstalk through the substrate.
随着射频电路工作频率和集成度的不断提高,常规CMOS制造中使用的低阻硅衬底具有较大的损耗和串扰,较难实现射频性能优异的器件与电路。
参考来源 - 基于SOI衬底的共平面波导射频损耗特性研究·2,447,543篇论文数据，部分数据来源于NoteExpress
The characteristics and requests of micromachining for silicon based sensors are introduced. The conventional methods of si substrate microfabrication are briefly described.
叙述了硅基传感器微机械加工的特点和要求，简要说明了硅衬底微细加工的常用方法。
Diamond thin films were successfully deposited on single - crystal si substrate at low pressure by a homemade equipment of electron cyclotron resonance chemical vapor deposition (ECRCVD).
采用国内研制的电子回旋共振化学气相沉积(ECRCVD)设备，在单晶硅衬底上沉积了金刚石薄膜。
The effect of ion beam flux density and the temperature of Si substrate on the properties of the film was investigated.
考察了离子束流密度和基底温度对薄膜性能的影响。
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