As operation frequency and integration improved,RF circuits on low resistivity Si substrate perform poorer because of high energy loss and serious crosstalk through the substrate.
随着射频电路工作频率和集成度的不断提高,常规CMOS制造中使用的低阻硅衬底具有较大的损耗和串扰,较难实现射频性能优异的器件与电路。
参考来源 - 基于SOI衬底的共平面波导射频损耗特性研究·2,447,543篇论文数据，部分数据来源于NoteExpress
To verify this method, we fabricated artificial transmission lines on a si substrate.
为了验证这种方法，我们在硅基片上构造出虚拟的传输线。
The effect of ion beam flux density and the temperature of Si substrate on the properties of the film was investigated.
考察了离子束流密度和基底温度对薄膜性能的影响。
The porous silicon as a sacrificial layer could be fabricated in locally defined areas on the si substrate, using the selective formation of porous silicon.
利用多孔硅形成的选择性，在指定的硅衬底区域制作多孔硅作牺牲层。
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