Epitaxy of strained Si on the obtained SGOI substrate.
在获得的SGOI衬底材料上生长高质量应变硅材料。
The effect of ion beam flux density and the temperature of Si substrate on the properties of the film was investigated.
考察了离子束流密度和基底温度对薄膜性能的影响。
Diamond thin films were successfully deposited on single - crystal si substrate at low pressure by a homemade equipment of electron cyclotron resonance chemical vapor deposition (ECRCVD).
采用国内研制的电子回旋共振化学气相沉积(ECRCVD)设备，在单晶硅衬底上沉积了金刚石薄膜。
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