To verify this method, we fabricated artificial transmission lines on a si substrate.
为了验证这种方法，我们在硅基片上构造出虚拟的传输线。
The effect of ion beam flux density and the temperature of Si substrate on the properties of the film was investigated.
考察了离子束流密度和基底温度对薄膜性能的影响。
The porous silicon as a sacrificial layer could be fabricated in locally defined areas on the si substrate, using the selective formation of porous silicon.
利用多孔硅形成的选择性，在指定的硅衬底区域制作多孔硅作牺牲层。
The characteristics and requests of micromachining for silicon based sensors are introduced. The conventional methods of si substrate microfabrication are briefly described.
叙述了硅基传感器微机械加工的特点和要求，简要说明了硅衬底微细加工的常用方法。
Diamond thin films were successfully deposited on single - crystal si substrate at low pressure by a homemade equipment of electron cyclotron resonance chemical vapor deposition (ECRCVD).
采用国内研制的电子回旋共振化学气相沉积(ECRCVD)设备，在单晶硅衬底上沉积了金刚石薄膜。
In addition, with the increasing distance between the filament and the substrate, the crystalline volume fraction and the grain size of poly-Si films notablely decrease.
另外，随着热丝与衬底间距的增大，沉积出的多晶硅薄膜样品的晶化率明显减小，薄膜的晶粒尺寸也相应减小。
In this paper, we have studied a preparation and structure of ceramic silicon sheets for substrate of poly-Si thin film solar cells.
文章研究了用来作为多晶硅薄膜太阳电池衬底的陶瓷硅材料的制备方法及其结构。
Epitaxy of strained Si on the obtained SGOI substrate.
在获得的SGOI衬底材料上生长高质量应变硅材料。
Results indicated that plasma surface metallurgical coating of Fe-Cr-Ni-B-Si had well wettability, and metallurgical bonding was obtained between coating and substrate.
结果表明，等离子表面冶金合金化涂层对基材具有良好的润湿性，基材表面熔化区的形成使得涂层与基材实现了完全的冶金结合。
Using a semi empirical quantum mechanical method (PM3), we calculated the potential barriers of reactions of chemical vapor deposition (CVD) diamond films on Si(111) substrate.
本文采用PM3方法，计算了化学汽相沉积金刚石薄膜成核与生长阶段反应势垒。
Using a semi empirical quantum mechanical method (PM3), we calculated the potential barriers of reactions of chemical vapor deposition (CVD) diamond films on Si(111) substrate.
本文采用PM3方法，计算了化学汽相沉积金刚石薄膜成核与生长阶段反应势垒。
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