As operation frequency and integration improved,RF circuits on low resistivity Si substrate perform poorer because of high energy loss and serious crosstalk through the substrate.
随着射频电路工作频率和集成度的不断提高,常规CMOS制造中使用的低阻硅衬底具有较大的损耗和串扰,较难实现射频性能优异的器件与电路。
参考来源 - 基于SOI衬底的共平面波导射频损耗特性研究·2,447,543篇论文数据，部分数据来源于NoteExpress
Epitaxy of strained Si on the obtained SGOI substrate.
在获得的SGOI衬底材料上生长高质量应变硅材料。
The effect of ion beam flux density and the temperature of Si substrate on the properties of the film was investigated.
考察了离子束流密度和基底温度对薄膜性能的影响。
To verify this method, we fabricated artificial transmission lines on a si substrate.
为了验证这种方法，我们在硅基片上构造出虚拟的传输线。
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