以掺杂少量硼(B)原子的p 型矽基半导体当作基板(Si substrate),以高温热扩散法将掺杂 浓度略高于硼原子浓度的磷原子掺入p 型的矽基板内,形成p-n 接面。
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aln grown on si substrate si基aln
Si-substrate 硅基
Si - substrate 多芯片
HR-Si substrate 高阻硅衬底
on si substrate 硅基片上
As operation frequency and integration improved,RF circuits on low resistivity Si substrate perform poorer because of high energy loss and serious crosstalk through the substrate.
随着射频电路工作频率和集成度的不断提高,常规CMOS制造中使用的低阻硅衬底具有较大的损耗和串扰,较难实现射频性能优异的器件与电路。
参考来源 - 基于SOI衬底的共平面波导射频损耗特性研究·2,447,543篇论文数据,部分数据来源于NoteExpress
To verify this method, we fabricated artificial transmission lines on a si substrate.
为了验证这种方法,我们在硅基片上构造出虚拟的传输线。
The effect of ion beam flux density and the temperature of Si substrate on the properties of the film was investigated.
考察了离子束流密度和基底温度对薄膜性能的影响。
The porous silicon as a sacrificial layer could be fabricated in locally defined areas on the si substrate, using the selective formation of porous silicon.
利用多孔硅形成的选择性,在指定的硅衬底区域制作多孔硅作牺牲层。
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