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但多晶硅电阻有较低的温度系数和低的方块电阻，应根据需要来选择电阻。
But the poly resistance has got lower temperature coefficient and lower Sheet resistance than well resistance So we choose the resistance type depending upon the requirements.
提出了一种基于实测伏安特性确定多晶硅电阻中晶粒数及晶粒平均长度的方法。
A method for determining the number of grain and the average length of grain in polysilicon resistor is given.
SOI衬底顶层硅呈现高阻状态，合适温度的退火可以明显降低SOI衬底顶层硅电阻率，也可部分减少外延高阻过渡层厚度。
The annealing at the proper temperature may decrease the resistivity of SOI substrate obviously and also improve the resistivity of epitaxial transitional layer partly.
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