但多晶硅电阻有较低的温度系数和低的方块电阻，应根据需要来选择电阻。
But the poly resistance has got lower temperature coefficient and lower Sheet resistance than well resistance So we choose the resistance type depending upon the requirements.
提出了一种基于实测伏安特性确定多晶硅电阻中晶粒数及晶粒平均长度的方法。
A method for determining the number of grain and the average length of grain in polysilicon resistor is given.
SOI衬底顶层硅呈现高阻状态，合适温度的退火可以明显降低SOI衬底顶层硅电阻率，也可部分减少外延高阻过渡层厚度。
The annealing at the proper temperature may decrease the resistivity of SOI substrate obviously and also improve the resistivity of epitaxial transitional layer partly.
本文利用扩展电阻技术对半导体硅、硅基材料进行测试分析，从而用以开发新材料和评估材料的质量。
We use spreading Resistance technique to test and analyze silicon and silica base materials. This technique is more suitable to control material quality and develop new materials.
探讨并分析具有光致负阻特性的双极型硅光电三极管阵列中各单元器件设置偏流隔离电阻的必要性。
The necessity of setting the bias current and segregation resistances in every element of bipolar silicon photo-negative resistance phototransistor array is studied and analysed.
还定量讨论了支配半个衰减正弦波残存波的等效电感、等效电阻和高压硅堆导通时间抖动的影响。
In addition, the influence of the equivalent inductance, the equivalent resistance and time-jitters of the diode on the residual waveform of a half sinewave with attenuation is discussed.
二硅化钼电热元件的电阻率随着温度的升高而迅速增加。 在正常操作情况下，元件电阻一般不随使用时间的长短而变化。
The resistivity of element rapidly rises as the temperature rises, under normal operating conditions , generally the element resistance doesn't change with the service time changing.
结合磁控溅射技术设计制作了薄膜型多孔硅乙醇气敏元件，吸附乙醇时具有良好的电阻和电容响应。
Combining magnetron sputtering technology designs and makes membrane porous silicon sensor, it has good resistance and capacitance response when adsorbs alcohol.
结果表明，提高低电阻率硅的体积含量和其分布连续性，可降低材料的整体电阻率。
The effect of each phase volume fractions and distribution on the bulk material's electrical resistivity was analyzed and compared.
硅化钛薄膜由于电阻率低和其它一些良好特性，在VLSI的栅电极和互连线中显示出它潜在的优势。
The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.
因此，在半导体行业中，必须快速、准确地对硅晶圆片导电类型、方块电阻和电阻率进行判断、测量和分档。
Therefore, in the semiconductor industry, we must quickly and accurately type conductive film on silicon wafers, the square resistance and resistivity of judgement, measurement, and grading.
这些Q值受到导体电阻和硅衬底的涡流损耗的限制。
These Q values are limited by the conductor resistance and eddy current loss in the silicon substrate.
电阻器是用一种耐高温的有机硅树脂和硅粉作基本材料封装的功率型绕线电阻。
This resistor is power wire wound resistor which is made by a kind of organic silicon rosin and silicon powder as basic material encapsulation.
所以说这是与硼硅玻璃，具有相当高的电阻率比一般的钠钙玻璃。
So it was with borosilicate glass, which had a considerably higher specific resistance than typical soda-lime glass.
硅太阳能电池等效串联电阻会影响其正向伏安特性和短路电流，而对开路电压没有影响，另外串联电阻的增大会使太阳能电池的填充因子和光电转换效率降低。
The equivalent series resistance of silicon solar cell can influence its straight volt-ampere property and short-circuit current, but have no influence on open-circuit voltage.
研究了硅衬底导电率变化对金属绝缘半导体传输线的分布电阻和分布电感参数的影响。
Examples are given to illustrate that the change of silicon substrate conductivity affects distributed parameters of MIS transmission line.
研究了液态硅参与下的反应烧结碳化硅的工艺参数、显微组织对其电阻率的影响。
The relationship of technological parameters and microstructure to the resistivity of reaction-bonded silicon carbide(RBSiC) in the presence of liquid silicon was studied in this paper.
在图5 - 1中所示的电路中，可控硅的栅极通过一个电阻器和二极管直接将其阳极连接。
In the circuit shown in Figure 5-1, the gate of the SCR is connected through a resistor and diode directly to its anode.
多晶硅经光刻后便形成力敏电阻条。
Photoetching polysilicon forms force sensitive resistance bar.
该技术将基于一个具有增强的高- k金属闸（HKMG平面工艺），新型应变硅，低电阻铜超低K互连。
The technology will be based on a planar process with enhanced high-K metal gate (HKMG), novel strained silicon, and low-resistance copper ultra-low-K interconnects.
在1773 ~ 1973K温度范围内，满足溅渣护炉的炉渣条件下，在真空碳管电阻炉中对转炉渣进行了硅热还原实验研究。
From 1773 K to 1973 K, the reduction experiments of converter slag simulated for slag splashing by silicon were carried out in a vacuum graphite tube resistance furnace.
多孔硅表面吸附乙醇分子后，多孔硅膜的导电性和介电常数会发生改变，引起气敏元件的电阻和电容值变化。
When the surface of porous silicon adsorbs gas molecule, the conductivity and dielectric Constance of porous silicon membrane take place to changes.
本文报道了以卤素钨灯为辐射源的快速热工艺(RTP)系统中的氮-硅直接热反应并和在常规电阻丝加热氧化炉中的氮-硅反应作了比较。
Direct nitrogen-silicon reaction in a tungsten-halogen RTP system has been observed and a comparison of N2-Si reaction using RTP system with the reaction using furnace system has been made.
本文报道了以卤素钨灯为辐射源的快速热工艺(RTP)系统中的氮-硅直接热反应并和在常规电阻丝加热氧化炉中的氮-硅反应作了比较。
Direct nitrogen-silicon reaction in a tungsten-halogen RTP system has been observed and a comparison of N2-Si reaction using RTP system with the reaction using furnace system has been made.
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