最后，讨论了原生直拉单晶硅中铜沉淀规律的机理。
Finally, the mechanism of copper precipitation in as-grown Czochralski silicon is discussed.
应用自制的红外光弹装置，研究了直拉单晶和区熔单晶的应力分布。
Applying the infrared polariscope made by ourselves, the distribution of the stresses in crystals grown by CZ and FZ have been researched.
直拉单晶炉生长过程中炉膛内真空度的高稳定性对硅单晶正常生长起到很重要的作用。
High stability of vacuum pressure in the hearth of Czochralski (CZ) crystal growing furnace plays a very important role in the normal growth of monocrystalline silicon.
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