最后，讨论了原生直拉单晶硅中铜沉淀规律的机理。
Finally, the mechanism of copper precipitation in as-grown Czochralski silicon is discussed.
应用自制的红外光弹装置，研究了直拉单晶和区熔单晶的应力分布。
Applying the infrared polariscope made by ourselves, the distribution of the stresses in crystals grown by CZ and FZ have been researched.
直拉单晶炉生长过程中炉膛内真空度的高稳定性对硅单晶正常生长起到很重要的作用。
High stability of vacuum pressure in the hearth of Czochralski (CZ) crystal growing furnace plays a very important role in the normal growth of monocrystalline silicon.
文中应用模拟电路、微机控制技术实现了对控温精度要求很高的直拉单晶硅炉温度控制系统的设计。
The design of the single crystal furnace temperature control system is realized by analog electronic, microcomputer unit control skills.
采用直拉单晶硅片代替成本较高的外延硅片，采取铂扩散的方法引入复合中心，从而控制少子寿命以减少快恢复二极管的反向恢复时间。
Spin-on platinum diffusion was used to introduce recombination center in order to reduce the reverse recovery time TRR of fast recovery diode.
研究了重掺杂直拉硅单晶中掺杂元素硼、磷、砷、锑对氧沉淀及其诱生二次缺陷行为的影响。
The effect of dopants on oxygen precipitation and induced defects in heavily doped Czochralski (CZ) silicon is investigated.
本文用超高压透射电子显微镜研究退火的高氧含量无位错直拉硅单晶中氧沉淀和诱生缺陷。
In this paper, oxygen precipitates and induced defects in annealed dislocation-free CZ-Si with high oxygen content have been investigated by HVEM.
氧沉淀是直拉硅单晶缺陷工程的重要研究课题。
Oxygen precipitation is an important subject of defect engineering for CZ silicon.
直拉法生长单晶硅是目前最常用最成熟的工业化方法。
Growth of Czochralski silicon crystals is the most common and perfect one in industry.
集成电路特征线宽的不断减小对直拉（CZ）单晶硅片中的缺陷控制和内吸杂技术提出了愈来愈高的要求。
The ever-smaller feature size of integrated circuit imposes on increasingly stringent requirements on the defect control and internal gettering(IG)capability of Czochralski(CZ)silicon wafers.
本文研究了直拉硅单晶的氧内吸杂（IG）工艺中，单晶的碳含量对缺陷形成的影响。
The influence of carbon on the defect formation during oxygen intrinsic gettering(IG) process has been studied for CZ silicon.
本文研究了快速热处理工艺(RTP)在模拟的CMOS热处理工艺中对直拉硅单晶中氧沉淀和洁净区(DZ)的影响。
The effect of rapid thermal processing (RTP) on oxygen precipitates profile and denude zone (DZ) in Czochralski (CZ) silicon wafer during simulating CMOS processing is investigated.
本文研究了电子辐照在氮保护气氛中生长的直拉硅单晶中引入的深能级。
The deep levels in electron irradiated CZ silicon single crystal grown in pure nitrogen protective atmosphere has been studied.
采用直拉法研制了大直径红外光学锗单晶，测量了其光学性能和力学性能。
Major diameter infrared optical Ge Monocrystal was developed by direct pulling method. The optical and mechanical properties were measured.
自动直径控制(adc)是直拉法单晶制造中的重要环节。
Automatic diameter control (ADC) is an important procedure in the Czochralski pulling.
概述了现代特大规模集成电路对硅单晶片的质量要求、直拉硅单晶生长工艺及晶片加工技术研究进展和硅单晶材料市场现状及发展趋势。
The quality requirements on si wafer for modern ULSI, research progress on CZ si crystal growth technology and wafer processing, the market situation and prospect were outlined.
介绍了直拉法生长单晶硅的基本原理及工艺条件。
This paper introduces the basic principle and process conditions of single crystal silicon growth by Cz method.
多晶硅用直拉法(CZ)或磁场直拉法(mcz)拉制成单晶硅棒。
Silicon single crystals are produced mainly by Czochralski method (CZ) and magnetic field app-lied Czochralski method (MCZ).
研究了掺杂剂原子种类及快速热处理技术对大直径直拉硅单晶中空洞型微缺陷密度的影响。
After rapid thermal annealing(RTA) in Ar atmosphera at high temperature, the flow pattern defects(FPDs) density decreased more sharply in Sb-doped wafers than that in lightly B-doped wafers.
采用直拉法生长普通和掺氮硅单晶，研究不同含氮浓度的晶体中氧化诱生层错（OSF）的行为。
The behavior of oxidation-induced stacking faults (OSF) in NCZ and CZ silicon single crystal was investigated.
TDR—JN系列全自动晶体生长炉是采用直拉法生长单晶硅材料的专用设备。
Introduction: TDR-JN series of automatic crystal growing furnace are special equipment applied with Czochralski Technique for Silicon Single crystals materials growing.
TDR—JN系列全自动晶体生长炉是采用直拉法生长单晶硅材料的专用设备。
Introduction: TDR-JN series of automatic crystal growing furnace are special equipment applied with Czochralski Technique for Silicon Single crystals materials growing.
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