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Therefore, plasma etching anisotropy can be improved by increasing rf frequency or rf-bias power.
因此，等离子体刻蚀的各向异性可以通过增加射频频率和射频功率来改善。
A technology based on plasma etching has been developed to produce antireflective surface structures.
提出一种基于等离子体刻蚀的技术，形成减反射表面结构。
The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching.
通过深紫外光刻和感应耦合等离子刻蚀设备，制备了所设计的器件。
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