Therefore, plasma etching anisotropy can be improved by increasing rf frequency or rf-bias power.
因此，等离子体刻蚀的各向异性可以通过增加射频频率和射频功率来改善。
A technology based on plasma etching has been developed to produce antireflective surface structures.
提出一种基于等离子体刻蚀的技术，形成减反射表面结构。
The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching.
通过深紫外光刻和感应耦合等离子刻蚀设备，制备了所设计的器件。
Some binary optical elements were manufactured by parallel direct writing and inductive couple plasma etching technology.
利用并行直写技术与感应耦合等离子刻蚀技术制作了部分二元光学元件。
We fabricate desired structured surfaces by holographic lithography, plasma etching and Teflon coating. The performance is evaluated by measuring the reflectance spectrum and contact angle.
实验上，我们采用全像微影术、电浆蚀刻以及旋镀铁氟龙的方式来制作试片，并量测该试片的反射频谱和接触角。
We fabricate desired structured surfaces by holographic lithography, plasma etching and Teflon coating. The performance is evaluated by measuring the reflectance spectrum and contact angle.
实验上，我们采用全像微影术、电浆蚀刻以及旋镀铁氟龙的方式来制作试片，并量测该试片的反射频谱和接触角。
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