金属栅极可以形成在具有修正轮廓的沟槽中。

A metal gate may be formed in the trench having a modified profile.

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本发明公开了一种利用后栅极工艺形成金属栅极的方法。

A method is provided for forming a metal gate using a gate last process.

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MM5483是一款单片集成电路，采用CMOS金属栅极的低阈值增强模式器件。

MM5483 is a monolithic integrated circuit utilizing CMOS metal-gate low-threshold enhancement mode devices.

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