传统晶体管使用一个叫做“栅极”的金属电极，以控制电子在平面硅基片上的沟道中的流动。
Conventional transistors use a metal electrode, called the gate, to control the flow of electrons through a planar channel in the silicon substrate.
金属栅极可以形成在具有修正轮廓的沟槽中。
A metal gate may be formed in the trench having a modified profile.
将金属氧化物半导体的栅极构造蚀刻(510)。
A gate structure of the metal oxide semiconductor is etched (510).
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