金属栅极可以形成在具有修正轮廓的沟槽中。
A metal gate may be formed in the trench having a modified profile.
本发明公开了一种利用后栅极工艺形成金属栅极的方法。
A method is provided for forming a metal gate using a gate last process.
MM5483是一款单片集成电路，采用CMOS金属栅极的低阈值增强模式器件。
MM5483 is a monolithic integrated circuit utilizing CMOS metal-gate low-threshold enhancement mode devices.
传统晶体管使用一个叫做“栅极”的金属电极，以控制电子在平面硅基片上的沟道中的流动。
Conventional transistors use a metal electrode, called the gate, to control the flow of electrons through a planar channel in the silicon substrate.
将金属氧化物半导体的栅极构造蚀刻(510)。
A gate structure of the metal oxide semiconductor is etched (510).
在另一实施例中，本发明方法包括作为下栅极导体的金属。
In another embodiment, the inventive method includes a metal as the lower gate conductor.
在另一实施例中，本发明方法包括作为下栅极导体的金属。
In another embodiment, the inventive method includes a metal as the lower gate conductor.
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