本文先介绍了基于功率MOSFET 的栅极电荷特性的开关过程；
In this paper, the switching process of power MOSFET is introduced based on its gate-charge characteristics.
本文就利用栅极电荷特性的考虑，介绍了一些计算用于开关igbt的驱动器输出性能的方法。
This article takes gate charge characteristics into account and then introduces some methods for calculating output performance of drivers used for switching IGBTs.
特定来说，在非易失性存储器装置经历许多编程循环时，电荷变为俘获在浮动栅极与沟道区之间的绝缘体或电介质中。
In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.
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