本文先介绍了基于功率MOSFET的栅极电荷特性的开关过程；
In this paper, the switching process of power MOSFET is introduced based on its gate-charge characteristics.
本文就利用栅极电荷特性的考虑，介绍了一些计算用于开关igbt的驱动器输出性能的方法。
This article takes gate charge characteristics into account and then introduces some methods for calculating output performance of drivers used for switching IGBTs.
特定来说，在非易失性存储器装置经历许多编程循环时，电荷变为俘获在浮动栅极与沟道区之间的绝缘体或电介质中。
In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.
在读取操作期间，该读取晶体管被激活以产生指示储存在该浮置栅极节点中的电荷的输出信号。
During a read operation, the read transistor is activated to produce an output signal indicative of the charge stored in the floating gate node.
如此形成的晶体管的阈值电压由保持在浮动栅极上的电荷量控制。
The threshold voltage of the transistor thus formed is controlled by the amount of charge that is retained on the floating gate.
通过所述栅极场来调制电荷注入。
具有栅极的二极管非易失性存储单元，其具有电荷储存结构，包括具有额外栅极端的二极管结构、与位于二极管节点之间的扩散阻挡结构。
A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal and a diffusion barrier structure between the diode nodes.
电荷陷入结构设置于栅极与鳍状结构之间。
The charge trapping structure is disposed between the gate and the fin structure.
通过低驱动内阻对栅极电容电荷的快速泄放提高脉冲后沿的下降速度。
Adopting gate resistance increased the rise time of edge, and adopting low output resistance of driver reduced the fall time.
通过低驱动内阻对栅极电容电荷的快速泄放提高脉冲后沿的下降速度。
Adopting gate resistance increased the rise time of edge, and adopting low output resistance of driver reduced the fall time.
应用推荐