欢迎访问《半导体学报》网站! 关键词: 掺杂浓度,横向PNP晶体管,辐射损伤,剂量率[gap=1068]Keywords: doping concentration, lateral PNP transistors, radiation damage, dose rates
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doping concentration stopper 浓度固定器
doping concentration x 掺杂浓度x
base doping concentration 基区掺杂浓度
best doping concentration 最佳掺杂浓度
ionized doping concentration 电离杂质浓度
doping concentration profile 杂质浓度分布
reduced doping concentration 折合掺杂浓度
emitter doping concentration 发射区杂质浓度
For certain doping concentration,a solar-blind region bandgap can be achieved.
对于特定的掺杂浓度,带隙的值可达到日盲区紫外线探测器的要求。
参考来源 - 氧化锌掺杂系统电子结构的第一性原理研究The optimum doping concentration of Bi3+ is found to be 1 at.
Bi3+的最佳掺杂浓度为1at.%。
参考来源 - 白光LED用钼酸盐红色荧光粉的制备及发光性能研究·2,447,543篇论文数据,部分数据来源于NoteExpress
With the increasing of doping concentration, the discharge specific capacity decrease.
掺杂材料随着掺杂浓度的提高,放电比容量降低;
With increasing doping concentration, the impact of neutral impurity scattering becomes more significant.
随着掺杂浓度的增加,中性杂质散射作用增强。
When doping concentration is increased, the system turns its semiconductor into conducting characteristics.
随着掺杂浓度的增大,该体系逐渐从半导体特性向导体方向转变。
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