For certain doping concentration,a solar-blind region bandgap can be achieved.
对于特定的掺杂浓度,带隙的值可达到日盲区紫外线探测器的要求。
参考来源 - 氧化锌掺杂系统电子结构的第一性原理研究The optimum doping concentration of Bi3+ is found to be 1 at.
Bi3+的最佳掺杂浓度为1at.%。
参考来源 - 白光LED用钼酸盐红色荧光粉的制备及发光性能研究·2,447,543篇论文数据，部分数据来源于NoteExpress
With increasing doping concentration, the impact of neutral impurity scattering becomes more significant.
随着掺杂浓度的增加，中性杂质散射作用增强。
When doping concentration is increased, the system turns its semiconductor into conducting characteristics.
随着掺杂浓度的增大，该体系逐渐从半导体特性向导体方向转变。
The effects of quantum well width, doping concentration, barrier width and height on RTD I-V characteristics are analyzed in details.
对量子阱宽度、掺杂浓度、势垒宽度和高度对RTD的I-V特性的影响进行了详细的分析。
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