With the increasing of doping concentration, the discharge specific capacity decrease.
掺杂材料随着掺杂浓度的提高，放电比容量降低；
With increasing doping concentration, the impact of neutral impurity scattering becomes more significant.
随着掺杂浓度的增加，中性杂质散射作用增强。
When doping concentration is increased, the system turns its semiconductor into conducting characteristics.
随着掺杂浓度的增大，该体系逐渐从半导体特性向导体方向转变。
It is indicated that the intrinsic carrier concentration increases more rapidly with increasing the doping concentration at low...
与常温情况相比，低温下本征载流子浓度将随杂质浓度的上升更为剧烈地上升。
The released nano-Ag partly exists in the chips peeled from film, and its total amount is increasing with its doping concentration.
纳米银的掺杂量越大，在相同时间内释放出来的纳米银越多，其中部分银是包含在海藻酸钠碎屑中的。
The effects of quantum well width, doping concentration, barrier width and height on RTD I-V characteristics are analyzed in details.
对量子阱宽度、掺杂浓度、势垒宽度和高度对RTD的I-V特性的影响进行了详细的分析。
According to the relationship between the crystal doping concentration and the laser pump light absorption, gives the ladder doped crystal.
根据激光晶体掺杂浓度与泵浦光吸收之间的关系得出了阶梯掺杂晶体模型。
The difference of V_F of different transistors is because of the difference of band gap caused by the difference of the doping concentration.
不同型号的晶体管的V_F不同是由于掺杂浓度不同导致的禁带宽度不同。
The optical transmittance of al doped AZO is as high as 85% in the visible region, the UV absorption edge is blue shifted greatly with increasing al doping concentration.
AZO透明导电材料的光学透过率在可见光范围内高达85%，紫外吸收限随着掺杂浓度的增加而发生蓝移。
With different barrier width, barrier height, sub-well width, spacer width and n-doping concentration, the changes of DC characteristics of DBRTDs are observed and analyzed.
当势垒厚度、势垒高度、子阱厚度、间隔层厚度、掺杂浓度改变时，可以观察到DBRTD直流特性也随之改变。
The effect factors such as the buried channel junction depth and substrate doping concentration on the CCD's optimum operating point and maximum charge capacity are analysed.
分析计算了埋沟结深、衬底掺杂等对CCD最佳工作点及最大电荷处理量的影响。
Theoretic analysis results show that the doping concentration and junction depth are main factors for the range of spectrum response of Si color sensor with double PN junction.
通过理论分析得出硅双结型色敏器件中掺杂浓度和两个结的结深是影响光谱响应范围的主要因素。
The films have Ohmic contact property, whose resistance is increasing with the increase of Ag doping concentration, which matches the model of Maxwell's theory of effective media.
复合薄膜具有欧姆特性，其电阻值随纳米银掺杂量的增加而增加，符合麦克斯韦的有效介质模型。
By utilizing the method, the doping concentration of the epitaxial layer is regulated to increase the widening of the depletion region so as to further improve the photon absorption efficiency.
利用本发明的方法，通过外延层的掺杂浓度来调节以增加耗尽区的展宽，可进一步提高光子吸收效率。
By using a novel fluorescence detection way, we measured the fluorescence spectra of crystals with different doping concentration. The experimental results is in consistent with theoretical analyse.
提出和设计了一种新颖的荧光探测方法，获得了不同掺杂浓度晶体的荧光光谱，实验结果与理论分析一致。
It is indicated that the boron doping promotes the growth of (111) face of the diamonds, enhances acceptor level, narrow 's band gap and increases carrier concentration correspondingly.
其原因是硼元素的掺入促进了金刚石单晶的(111)晶面生长，使受主能级提高，晶体的带隙变窄，载流子浓度提高。
Germanium window with low absorption will be obtained through controlling donor concentration and doping isoelectronic im purity.
控制施主浓度和掺杂等电子杂质，可以获得低吸收锗窗。
The dielectric loss is measured to study the variation of defect concentration in doped ceramics. And the mechanism of doping is analyzed.
利用介电损耗峰随掺杂量的变化，研究了缺陷浓度在掺杂材料中的变化，以此来研究掺杂对铁电性能的影响机制。
Gain the best concentration of doping corresponding to the strongest absorption peak.
存在并给出对应强吸收峰的最佳掺杂浓度。
The effects of oxidation doping parameters such as doping way and time, concentration of oxidant, concentration and kinds of acid on the resistance of the film were studied.
研究了凝固浴组成、氧化剂浓度、掺杂时间、掺杂酸种类及浓度等因素对导电膜的影响。
The influence of Mg concentration in doping on phase matching temperature, phase matching Angle, optical homogeneity, lattice parameter and density of the crystal is also stated.
掺镁浓度对晶体相匹配温度、相匹配角、光学均匀性、点阵常数和密度的影响。
The measurement of carrier concentration profiles over a wide range of doping le-vels and depths by using automatic electrochemical C-V profiling technique is described.
本文叙述了通过自动电化学c - V剖面图技术，在宽的掺杂和深度范围内，载流子浓度纵向分布的测量。
It is showed that bromine anions and charge transfer complex formed in the doping process enhanced the charge carrier concentration then promote the conductivity of PANI.
结果表明，和氢溴酸对PANI的质子酸掺杂不同，溴掺杂过程中产生的溴负离子增加了PANI的载流子浓度，形成了电子转移复合物，提高了聚苯胺的电导率。
A series of general formulae of impurity concentration distribution along the ingot after point-doping zone melting has been derived.
得到了点掺杂区熔后杂质沿锭长分布的一系列普遍公式。
A novel polymer network stabilized cholesteric liquid crystal display was fabricated by doping a low concentration of liquid crystalline monomer and polymerizing under UV light at planar state.
在胆甾液晶材料中掺入少量的聚丙烯类单体材料制作了一种新型的聚合物网络胆的液晶显示器。
The doping time and concentration of dopant affect conductivity I2-doped PTV film has good air stability in six months.
PTV膜具有较好的力学性能、I＿2掺杂PTV膜导电率有极好的空气稳定性。
The doping time and concentration of dopant affect conductivity I2-doped PTV film has good air stability in six months.
PTV膜具有较好的力学性能、I＿2掺杂PTV膜导电率有极好的空气稳定性。
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