• With increasing doping concentration, the impact of neutral impurity scattering becomes more significant.

    随着掺杂浓度的增加,中性杂质散射作用增强。

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  • When doping concentration is increased, the system turns its semiconductor into conducting characteristics.

    随着掺杂浓度的增大,该体系逐渐从半导体特性向导体方向转变。

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  • The effects of quantum well width, doping concentration, barrier width and height on RTD I-V characteristics are analyzed in details.

    对量子阱宽度、掺杂浓度、势垒宽度和高度对RTD的I-V特性的影响进行了详细的分析。

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  • The difference of V_F of different transistors is because of the difference of band gap caused by the difference of the doping concentration.

    不同型号的晶体管的V_F不同是由于掺杂浓度不同导致的禁带宽度不同。

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  • The optical transmittance of al doped AZO is as high as 85% in the visible region, the UV absorption edge is blue shifted greatly with increasing al doping concentration.

    AZO透明导电材料的光学透过率在可见光范围内高达85%,紫外吸收限随着掺杂浓度的增加而发生蓝移。

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  • With different barrier width, barrier height, sub-well width, spacer width and n-doping concentration, the changes of DC characteristics of DBRTDs are observed and analyzed.

    当势垒厚度、势垒高度、子阱厚度、间隔层厚度、掺杂浓度改变时,可以观察到DBRTD直流特性也随之改变。

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  • The effect factors such as the buried channel junction depth and substrate doping concentration on the CCD's optimum operating point and maximum charge capacity are analysed.

    分析计算了埋沟结深、衬底掺杂等对CCD最佳工作点及最大电荷处理量的影响。

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  • Theoretic analysis results show that the doping concentration and junction depth are main factors for the range of spectrum response of Si color sensor with double PN junction.

    通过理论分析得出硅双结型色敏器件中掺杂浓度和两个结的结深是影响光谱响应范围的主要因素。

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  • The films have Ohmic contact property, whose resistance is increasing with the increase of Ag doping concentration, which matches the model of Maxwell's theory of effective media.

    复合薄膜具有欧姆特性,其电阻值随纳米银掺杂量的增加而增加,符合麦克斯韦的有效介质模型。

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  • The films have Ohmic contact property, whose resistance is increasing with the increase of Ag doping concentration, which matches the model of Maxwell's theory of effective media.

    复合薄膜具有欧姆特性,其电阻值随纳米银掺杂量的增加而增加,符合麦克斯韦的有效介质模型。

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