金属栅极可以形成在具有修正轮廓的沟槽中。
A metal gate may be formed in the trench having a modified profile.
本发明公开了一种利用后栅极工艺形成金属栅极的方法。
A method is provided for forming a metal gate using a gate last process.
MM5483是一款单片集成电路,采用CMOS金属栅极的低阈值增强模式器件。
MM5483 is a monolithic integrated circuit utilizing CMOS metal-gate low-threshold enhancement mode devices.
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