现在研究者正在努力优化器件结构、石墨烯性质和栅极电介质以提高晶体管性能。
The team is now busy working on improving the performance of the transistors by optimizing device structure, graphene quality and the gate dielectric.
传统晶体管使用一个叫做“栅极”的金属电极，以控制电子在平面硅基片上的沟道中的流动。
Conventional transistors use a metal electrode, called the gate, to control the flow of electrons through a planar channel in the silicon substrate.
5月，美国芯片巨头因特尔(Intel)公司(由摩尔博士与他人共同创办)宣布了一个计划，将这种市场名为“三栅极”的晶体管技术方案商业化。
In May Intel, an American chip giant (co-founded, as it happens, by Dr Moore), announced plans to commercialise a technological fix of this sort under the marketing name "Tri-Gate".
在栅极电介质层上形成界面层。
浮动栅极定位于源极区与漏极区之间。
The floating gate is positioned between the source and drain regions.
不同的栅极电压下的温度漂移也不相同。
Temperature drift with different grid voltage is different, too.
电荷陷入结构设置于栅极与鳍状结构之间。
The charge trapping structure is disposed between the gate and the fin structure.
那么屏栅极电阻呢？
栅极电极在栅极绝缘膜上形成，并具有侧壁。
The gate electrode is formed on the gate insulating film and has a sidewall.
第一栅极及第二栅极分开配置于所述基底上。
The first gate and the second gate are separately disposed on the substrate.
栅极电路发生故障。
其工作特性依赖于栅极电压和梳状铝电极的结构。
The working properties depend on the gate bias voltage and the structure of pectinate Al electrode.
将金属氧化物半导体的栅极构造蚀刻(510)。
A gate structure of the metal oxide semiconductor is etched (510).
采用本发明的方法可大幅提高栅极氧化层的均匀性。
The method of the present invention can greatly increase evenness of the grid oxide layer.
但不足之处是发射电流密度太小和有较大的栅极电流。
But it provides too small emission current density and gives a large gate current.
每个晶体管可以由形成在半导体上的栅极绝缘层形成。
Each transistor may be formed from a gate insulating layer formed on a semiconductor.
在半导体中的源极区和漏极区可以限定晶体管栅极长度。
Source and drain regions in the semiconductor may define a transistor gate length.
本发明公开了一种利用后栅极工艺形成金属栅极的方法。
A method is provided for forming a metal gate using a gate last process.
实施例中，本方法包括在半导体衬底上形成栅极电介质层。
In an embodiment, the method includes forming a gate dielectric layer on a semiconductor substrate.
在高频头中的射频电平调节电路中使用了双栅极场效应管；
Employing a bigrid EFT, the modulator circuit in the rf head is designed for rf level control.
电光聚合物材料通常采用带栅极的电晕极化技术进行处理。
The electro-optic polymer material is usually poled by corona poling technique with a grid.
此外，第一栅极与第二栅极的共用掺杂区域配置于基底中。
Furthermore, the common doped region of the first gate and the second gate is disposed in the substrate.
栅极电极驱动电路用以于数据电极被驱动时驱动对应的栅极电极。
The grid electrode driving circuit is used to drive correspondent grid electrode when data electrode is driven.
这种静电击穿破坏TFT产品的短路环，引起栅极与源漏电极短路。
This kind of electrostatic breakdown destroys the short-circuit ring of TFT and leads to the short between the gate and the source.
本文先介绍了基于功率MOSFET的栅极电荷特性的开关过程；
In this paper, the switching process of power MOSFET is introduced based on its gate-charge characteristics.
基于双栅极空气计数管的工作原理，提出了多路输出电源的设计指标。
By the working principle of Double Grid Air Counter (DGAC) employed in detecting exoelectron emission, we put forward the design specifications of the power supply.
分别讨论了聚焦极电位、聚焦极孔径以及栅极电位对发射电子束的影响。
Influence of focus electrode bias, focus hole size and grid electrode bias on the emission electron beams was discussed.
模拟得到了栅极间电势分布、电场强度分布及栅极间氙离子数密度分布。
The simulation results include the distribution of the electric potential between the grids and distribution of the electric field strength, and also the distribution of Xenon ion number density.
模拟得出栅极电流与实验结果符合，而得出的优化氮含量有待实验证实。
The results presented are consistent with experimental data, whereas a new finding for an optimum nitrogen content in HfSiON gate dielectric requires further experimental verifications.
晶体管栅极可以由具有不同功函数的第一栅极导体和第二栅极导体形成。
The transistor gate may be formed from first and second gate conductors with different work functions.
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