栅极电极在栅极绝缘膜上形成，并具有侧壁。
The gate electrode is formed on the gate insulating film and has a sidewall.
你可以把栅极切成两半，而每部分仍然能够拍出同样的照片。
You could cut the grid into two pieces and they would still take the same picture.
其工作特性依赖于栅极电压和梳状铝电极的结构。
The working properties depend on the gate bias voltage and the structure of pectinate Al electrode.
采用过渡焊接的方法成功解决了栅极脱焊的问题；
The problem of grid jointing invalidation is solved by using the interim seal.
但不足之处是发射电流密度太小和有较大的栅极电流。
But it provides too small emission current density and gives a large gate current.
推力器栅极部分是影响推力器寿命的主要关键部件之一。
The thrusters grid is one of the many key components in the influence of the thruster life.
在高频头中的射频电平调节电路中使用了双栅极场效应管；
Employing a bigrid EFT, the modulator circuit in the rf head is designed for rf level control.
电光聚合物材料通常采用带栅极的电晕极化技术进行处理。
The electro-optic polymer material is usually poled by corona poling technique with a grid.
当由栅极施加的电流足够强的时候，电子会在源极和栅极之间进行流动。
When the current applied by the gate is high enough, electrons flow through the channel between the source and drain electrodes.
能源公用设备的普及加速了寻找一种可以使栅极稳定下来的电池的脚步。
Energy utilities are increasingly looking for batteries that can help stabilize the grid.
本文先介绍了基于功率MOSFET的栅极电荷特性的开关过程；
In this paper, the switching process of power MOSFET is introduced based on its gate-charge characteristics.
现在研究者正在努力优化器件结构、石墨烯性质和栅极电介质以提高晶体管性能。
The team is now busy working on improving the performance of the transistors by optimizing device structure, graphene quality and the gate dielectric.
解决上述问题的方法是自动控制输出电路MOS管的栅极电压变化率。
This problem can be solved by controlling the variety speed of the G-S(grid-source) voltage of MOS transistors.
分别讨论了聚焦极电位、聚焦极孔径以及栅极电位对发射电子束的影响。
Influence of focus electrode bias, focus hole size and grid electrode bias on the emission electron beams was discussed.
晶体管栅极可以由具有不同功函数的第一栅极导体和第二栅极导体形成。
The transistor gate may be formed from first and second gate conductors with different work functions.
传统晶体管使用一个叫做“栅极”的金属电极，以控制电子在平面硅基片上的沟道中的流动。
Conventional transistors use a metal electrode, called the gate, to control the flow of electrons through a planar channel in the silicon substrate.
依据导电沟道内的电势分布，分析了栅极长度变化对OSIT工作特性的影响。
Depending on the potential distribution in the conductive channel, the influence of changing gate length on the OSIT s operation characteristic is analyzed.
在给定晶体管中的第一栅极导体和第二栅极导体的相对尺寸控制晶体管的阈值电压。
The relative sizes of the first and second gate conductors in a given transistor control the threshold voltage for the transistor.
引进廉栅极绕组的目的就是为了克服原始麦氏放大器不能克服的“超出额定”的情况。
This screen grid winding is introduced to alleviate the over-rated conditions of the original McIntosh Amplifier.
器件的双uvlo功能保护功率MOSFET不会因栅极驱动或电源电压过低而损坏。
Its dual UVLO feature protects the power MOSFET from damage in the event that the gate-drive or supply voltage is too low.
研制了一种新型本质抗干扰开关电容网络变送器与栅极探头匹配，构成相浓度测量系统。
The CPM system was formed by developing a new kind of intrinsically stray immune switched capacitance transducer to match with the grid sensor.
栅极驱动器，包括该栅极驱动器的电动机驱动装置，以及配备该电动机驱动装置的设备。
Gate driver, motor driving device including the gate driver, and apparatus equipped with the motor driving device.
本文通过试验论述了缩短三极电子枪阳极与栅极的间距是提高低压电子枪亮度的有效方法。
This paper describes a method which can effectively improve the brightness of the conventional triode electron gun by reducing the distance between the anode and the grid cap.
本文描述了用于装配电子枪时控制阴极与第一栅极间距的光纤传感器的结构及其测量系统。
The construction and measurement system of fiber-optic sensor for monitoring the distance between cathode and first grid during assembly of electron gun are described.
格勒热相信通过使用更多的电极能够提高准确率，而且这个研究小组现在也在尝试121个感应器的栅极。
Greger believes the accuracy can be improved by using more electrodes, and the team is now working with grids of 121 sensors.
它采用四极枪结构，两个栅极，第一栅极采用双层同心球面网，第二栅极外还添加了屏蔽筒。
The first grate has double spherical nets with the same center and outside the second one there is a shield cylinder to make electron congregate.
将通道外伸、三面围以栅极原子，这样就能够增加栅极的表面积，更好地控制通道，并减少泄漏。
By sticking the channel into the air and surrounding it on three sides with the atoms of the gate, you increase the surface area of the gate.
为了理解有机静电感应三极管的肖特基栅极原理，本文在第二章阐述了PN结和肖特基结的特性。
In order to comprehend schottky gate of organic static induction transistor, chapter two expatiates characteristics of PN junction and schottky junction.
为了理解有机静电感应三极管的肖特基栅极原理，本文在第二章阐述了PN结和肖特基结的特性。
In order to comprehend schottky gate of organic static induction transistor, chapter two expatiates characteristics of PN junction and schottky junction.
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