通过所述栅极场来调制电荷注入。
第二栅极在 第二储存结构上。
浮动栅极定位于源极区与漏极区之间。
The floating gate is positioned between the source and drain regions.
一个故障输出指示栅极状态。
不同的栅极电压下的温度漂移也不相同。
Temperature drift with different grid voltage is different, too.
栅极设置于基底衬底上，横跨鳍状结构。
The gate is disposed on the substrate and straddled the fin structure.
所述沟槽栅极沿纵向延伸。
所述沟槽栅极的宽度沿所述纵向不一致；
The width of the trench gate is not uniform along the longitudinal direction;
第一栅极与第二栅极分离。
输出功率和漏电流增加的栅极电压的增加。
The output power and drain current increase as the gate voltage increases.
电荷陷入结构设置于栅极与鳍状结构之间。
The charge trapping structure is disposed between the gate and the fin structure.
经分析，是中间片状栅极减弱了发光亮度。
We found its brightness is not enough since the middle gate is not transparent.
金属栅极可以形成在具有修正轮廓的沟槽中。
A metal gate may be formed in the trench having a modified profile.
那么屏栅极电阻呢？
第一栅极及第二栅极分开配置于所述基底上。
The first gate and the second gate are separately disposed on the substrate.
栅极电路发生故障。
采用本发明的方法可大幅提高栅极氧化层的均匀性。
The method of the present invention can greatly increase evenness of the grid oxide layer.
在半导体中的源极区和漏极区可以限定晶体管栅极长度。
Source and drain regions in the semiconductor may define a transistor gate length.
本发明公开了一种利用后栅极工艺形成金属栅极的方法。
A method is provided for forming a metal gate using a gate last process.
本发明公开了一种利用后栅极工艺形成金属栅极的方法。
A method is provided for forming a metal gate using a gate last process.
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