更精细的刻蚀技术可以孕育更高性能的微芯片，而这仅仅是开始。
Finer etching begets higher-performing microchips, and that's just a start.
不能采用更短波长的激光进行芯片刻蚀已经限制了（芯片制造商）在硅晶上设计更精细的电路。
The inability to etch chips with lasers in the shorter wavelengths has limited how precisely they can design circuits on silicon.
在苏加塔湖溢流向图尔卡纳湖的长期过程中，波浪作用在这些曾经的湖岸线上刻蚀出槽口和台阶形痕迹。
During a protracted period when Lake Suguta was overflowing into Lake Turkana, wave action carved notches and terraces into these fossil shorelines.
通过纳米制备技术研究者在氮化硅中刻蚀出许多空洞以构成所需图案，使得波导具有合适的隐形折射率。
Using nanofabrication techniques, the researchers etched tiny holes into the nitride to make a desired pattern, giving the waveguide the cloaking refractive index profile.
惠普实验室的研究人员最近成功的在一块平坦的硅片上刻蚀图案，使它能像汤勺一样可以聚焦光线，惠普实验室的雷蒙德·博索尔(RaymondBeausoleil)说。
Researchers at HP Labs recently managed to etch a pattern into a flat piece of silicon so that it could focus light "like a spoon", says Raymond Beausoleil of HP Labs.
衬底预处理采用化学刻蚀和高温处理。
Chemical etching and high temperature heating were used for pretreatment of substrates.
分析了检测结果和刻蚀机理。
制作采用的是传统的光刻、刻蚀工艺。
The sensor is fabricated by traditional lithography and etching.
田纳西河刻蚀着坎伯兰高原的东部边缘。
The Tennessee River sculpts the east side of the Cumberland Plateau.
简单介绍了ICP刻蚀系统和刻蚀原理。
通过调整工艺条件，可严格控制刻蚀速率。
The etching rate can be strictly controlled by adjusting technological conditions.
介绍了一种新的亚微米发射极窗口刻蚀工艺。
This paper introduces a novel submicron etching technology for emitter window.
提出了一种基于软刻蚀技术的复制和集成新工艺。
A new replication and integration techniques based on soft lithographical method are presented.
同时给出了刻蚀深度与脉冲速率及脉冲时间的实验曲线。
Experimental curves of etching depth versus repeated rate and radiation time of laser pulse are given.
通常，所有暴露在刻蚀剂中的材料都具有一定的刻蚀速率。
More often, all of the materials exposed to the etchant have a finite etch rate.
等离子体低温刻蚀是一种针对高深宽比结构的干法刻蚀技术。
High aspect ratio structures have been successfully fabricated by plasma cryo-etching on silicon wafers.
结果表明，刻蚀速率与刻蚀气体的混合比率呈现非单调特性。
Results indicate that etching rates of BST thin films present non-monotonic dependence on mixing ratio of etching gases.
难熔金属和贵金属组合的这一层薄膜使刻蚀成为一个艰巨任务。
The combination of refractory and noble metals in a single layer makes etching a formidable task.
本文以金属刻蚀去胶腔为背景，简述干刻清洗工艺开发和评价过程。
Based on ash chamber of metal etch this paper describes the full process of dry clean development and evaluation.
利用牺牲氧化改善刻蚀后的表面形貌，进一步减小表面的刻蚀损伤。
In this study sacrificial oxidation is used as a post-etch treatment to reduce surface roughness and etch damage.
由光致刻蚀剂记录两束相干光干涉条纹是制作全息光栅的关键步骤。
Recording the interference fringe produced from two coherent light beams by use of photoresist is a key process in manufacturing a holographic grating.
利用并行直写技术与感应耦合等离子刻蚀技术制作了部分二元光学元件。
Some binary optical elements were manufactured by parallel direct writing and inductive couple plasma etching technology.
研究还发现，不同垫层（塑料片、钢片和铝板）导热性能对刻蚀速率影响很小。
Meanwhile, the difference in thermal conductivity of underlining materials (plastic sheet, steel sheet and aluminium plate) has little effect on the etching rate.
通过反应离子刻蚀可以将光刻胶微透镜图形转移至这种高性能的聚合物材料上。
Pattern transfer technique is used to transfer photoresist microlens arrays into the polymer underlayer.
提出了优化实验参数、增加束掩模和利用刻蚀技术三种改善原子光刻实验的方法。
Three solutions of optimization of experimental parameters, adding beam mask and using etching technologies for improving atom lithography quality are presented.
用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。
The optical emission spectrum of r. f. plasma during amorphous silicon based film etching in CF4 gas is detected.
文章综述了扫描探针刻蚀技术的最新研究进展，并介绍了扫描探针刻蚀加工机理。
This paper summarized the current development of scanning probe lithography and introduced the mechanisms of forming nanometer structure.
提出了采用耐酸油墨丝网印刷所需图案、混合酸刻蚀制备装饰性铝板的新方法。
A new process of manufacturing decorative aluminium plate is introduced. The figures were engraved by a newly developed mixed acid.
结果表明刻蚀气体的组分和射频偏压对刻蚀速率有较大影响，而气体流量影响不大。
The results show that the etching rate depends strongly on plasma composition and the RF bias voltage, but rather weakly on the gas flow rate.
电池片表面无划伤，但对于在制作过程中采用激光刻蚀工艺的电池的边沿刻蚀线除外。
No scratch allowed, with exception of laser scratched lines for the cells fabricated with laser for edge isolation.
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