另外，尼康光刻机业务也开始扭亏为盈。
这位分析师还表示：“尼康在LCD光刻机市场上仍保持强势地位。
不过他表示闪存业者会使用液浸式光刻机制造位密度在64 - 128gbit的闪存芯片产品。
However, he did say chip makers expect to ship 64 and 128 Gbit flash devices using immersion tools.
这款产品将使用Intel第三代HKMG工艺，第五代硅应变技术，另外与32nm类似，22nm制程仍将继续使用193nm液浸式光刻技术。
It will also use copper interconnects, low-k, strain silicon and other features. Like 32-nm, Intel will make use of 193-nm immersion lithography.
因而是对量子光刻术的一个很大改进。
制作采用的是传统的光刻、刻蚀工艺。
The sensor is fabricated by traditional lithography and etching.
同时还介绍了电子束光刻技术及其改进。
The electron beam lithography and its improvement are introduced also.
钻石激光刻字技术是钻石标记的主流技术。
Diamond laser marking is the mainstream diamond marking technology.
对准方法，对准基底，光刻装置和器件制造方法。
Aligning method, aligning substrate, photoetching device and component manufacturing method.
光刻装置，器件制造方法，以及由此制造的器件。
Lithographic apparatus, device manufacturing method, and device manufactured thereby.
光刻装置，镜元件，器件制造方法，及束传送系统。
Photoetching device, mirror element, device producing method and beam transfering system.
讨论了采用浸液式光刻获得的成像结果和套刻结果。
In this paper we discuss the results on imaging and overlay obtained with immersion.
采用新型的多层抗蚀剂结构的电子束光刻来形成图形。
Electron - beam lithography with a novel multilevel resist structure defines the pattern.
阐述高分辨力光刻机的图像对准系统的原理及实现过程。
The principle and implementation of high precision video based alignment system are described.
采用全息法制备了光刻胶光栅，并用该光栅掩膜离子蚀刻。
Photoresist grating was fabricated by holography, and it was used in the mask of ion etching.
分析了光刻图形侧墙斜坡对离子注入后图形特征尺寸的影响。
Influences of side-wall slope of photolithography pattern on characteristic dimensions after ion implantation are analyzed.
氧化物、掩模或标线的不透明区域，或光刻层中不需要的小孔。
A small undesired hole in an oxide opaque region of a mask or reticle or in a photoresist layer.
利用光刻胶形成保护侧墙，用湿法腐蚀来形成发射极钝化边沿。
With the protection of photoresist sidewall, the emitter passivation ledge is fabricated by wet etch.
主要介绍一种光刻机投影物镜温度补偿控制的原理及控制算法。
The principle and control algorithm of temperature compensation for Sub Micron projection lithography objectives are introduced.
结果表明，光刻胶热熔技术是一种简单、实用的微透镜阵列制作技术。
The results show that the technology of melting photoresist is a simple and practical technology of fabricating microlens array.
另外，本方法也与成熟的光刻工艺兼容，降低了成本，有利于工业生产。
In addition, the method is compatible with the matured photoetching process, thereby reducing the cost and being beneficial to industrial production.
对常压射频冷等离子体去除光刻胶的研究具有重要的学术意义和实用价值。
Therefore, the study of photoresist stripping by using atmospheric pressure plasma is very important in the research and the practical application.
着重研究了光刻胶的前烘胶温度、回流温度、回流时间对回流效果的影响。
The impact of prebake temperature, reflow temperature and reflow time on the effect of pr reflowing is studied.
校准光刻装置的方法，对准方法，计算机程序，光刻装置和器件制造方法。
A method of calibrating a lithographic apparatus, an alignment method, a computer program, a lithographic apparatus and a device manufacturing method.
制备基底的方法，测量方法，器件制造方法，光刻装置，计算机程序和基底。
Method of preparing a substrate, method of measuring, device manufacturing method, lithographic apparatus, computer program and substrate.
研究结果表明，这种含肉桂基的光刻胶具有优良的耐热性与适宜的光敏特性。
The results show that the photoresist which contains cinnamyl group exhibited an excellent thermal stability and adequate photosensitive properties.
针对热压印光刻工艺中因热变形而导致精度丧失的问题，提出了冷压印光刻。
Aiming at the lost accuracy happened in HEL (hot embossing lithography) because of thermal distortion, room-temperature imprint lithography is proposed.
通过反应离子刻蚀可以将光刻胶微透镜图形转移至这种高性能的聚合物材料上。
Pattern transfer technique is used to transfer photoresist microlens arrays into the polymer underlayer.
随着我国微电子技术的飞速发展，要求研制分辨率高、工作视场大的光刻设备。
With the rapid development of microelectronic technology in china, photolithographic equipments of high resolution and large field are demanded.
随着我国微电子技术的飞速发展，要求研制分辨率高、工作视场大的光刻设备。
With the rapid development of microelectronic technology in china, photolithographic equipments of high resolution and large field are demanded.
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