At the present time, chemical mechanical planarization (CMP) is the most effective technology for global and local planarization of the wafer in IC manufacturing.
目前，化学机械抛光技术(CMP)被认为是能够实现晶圆表面局部平坦化和全局平坦化的最佳方法。
And the slopes of characteristic line sections represent planarization of film surface.
特征线段的斜率反映了薄膜表面的平面度。
The sacrificial layer is removed through an etching process such as chemical mechanical planarization.
该牺牲层是通过例如化学机械平面化的蚀刻工艺除去的。
The copper chemical-mechanical polishing (CMP) which is the key planarization technology for ULSI manufacturing was discussed.
对用于甚大规模集成电路(ULSI)制造的关键平坦化工艺———铜化学机械抛光(CMP)技术进行了讨论。
The use of different barrier slurries for copper chemical mechanical planarization CMP creates a challenge for post-CMP cleaning.
铜化学机械平面化不同阻挡层浆料的应用引起了铜CMP后清洗的问题。
Using the polishing pad with grooves or rougher surfaces can increase the material removal and planarization rate.
抛光垫粗糙的表面有利于提高材料去除率。
The conditioning ring polishing machining is used for ultra-precision planarization; and kinematical analysis on pitch polishing is carried out.
修正环型抛光机用于超精密平面抛光，并对沥青抛光进行了运动学分析。
However, the traditional CMP technology has some disadvantages and limitations. It is important to research and develop new planarization technology while improving the traditional CMP technology.
然而，传统CMP技术还存在一定的缺点或局限性，人们在不断完善CMP技术的同时，也在不断探索和研究新的平坦化技术。
However, the traditional CMP technology has some disadvantages and limitations. It is important to research and develop new planarization technology while improving the traditional CMP technology.
然而，传统CMP技术还存在一定的缺点或局限性，人们在不断完善CMP技术的同时，也在不断探索和研究新的平坦化技术。
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