Chemical mechanicalpolishing is a solitary technology planarizing the wafer with local and global planarization, but the materialremoval mechanism of wafer CMP and the problems on process variables and technologies of CMP systemare not fully understood.
CMP是唯一能够实现硅片局部和全局平坦化的方法,但CMP的材料去除机理至今还没有完全理解、CMP系统过程变量和技术等方面的许多问题还没有完全弄清楚。
参考来源 - 超大规模集成电路制造中硅片化学机械抛光技术分析Currently, chemical mechanical Polishing (CMP) is the most effective technology for global and local planarization of the wafer in IC manufacturing.
目前,化学机械抛光技术(CMP)被认为是能够实现晶圆表面局部平坦化和全局平坦化的最佳方法。
参考来源 - 三工位CMP控制系统的设计与开发Spaces performance disposable lens, three-dimensional, realistic despite constantly simplify and planarization process, establish a set of its own modeling system.
空间表现亦弃透视、立体、写实于不顾,在不断简化和平面化的过程中,建立起一套自己的造型体系。
参考来源 - 符号式的表达·2,447,543篇论文数据，部分数据来源于NoteExpress
And the slopes of characteristic line sections represent planarization of film surface.
特征线段的斜率反映了薄膜表面的平面度。
The sacrificial layer is removed through an etching process such as chemical mechanical planarization.
该牺牲层是通过例如化学机械平面化的蚀刻工艺除去的。
Using the polishing pad with grooves or rougher surfaces can increase the material removal and planarization rate.
抛光垫粗糙的表面有利于提高材料去除率。
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