STT-RAM is a second-generation MRAM technology that is said to solve some of the problems posed by conventional MRAM structures.
通常认为STT-RAM是MRAM技术的第二代技术，这项技术解决了常规MRAM的一些问题。
MRAM is non-volatile memory, it is also power efficient and operates at ultra-high speed, the companies said in a joint statement.
据两家公司的联合声明称，MRAM是一种非易失性存储技术，它具备速度极快和耗电量低的优点。
IBM, collaborating with Germany's Infineon Technologies, has developed a one megabit (million bit) MRAM chip at its laboratories in East Fishkill, New York.
IBM与德国英飞凌技术公司合作，在其位于纽约东费什基尔的实验室开发出一块1兆(百万位)MRAM芯片。
Digit and word lines of MRAM structures are subsequently formed.
然后形成MRAM结构的数字线和字线。
A method of forming minimally spaced MRAM structures is disclosed.
本发明公开了一种形成最小间隔MRAM结构的方法。
A magnetic random access memory (MRAM) and a manufacturing method and a programming method thereof are provided.
本发明公开了一种磁性存储器及其制造方法与写入方法。
Tunneling magnetoresistance (TMR) discovered in magnetic tunneling junction (MTJ) has high sensitivity and adjustable junction resistance, so it has potential to be applied in new MRAM devices.
磁性隧道结结构中发现的隧道磁电阻效应（TMR）灵敏度高、结电阻容易调整，在开发新型MRAM方面极具应用潜力。
This paper introduces the giant (GMR) and tunneling (TMR) magnetoresistive effect. The recent application and development of the magnetic random access memory (MRAM) for computer are discussed also.
介绍了巨磁电阻(GMR)及隧道磁电阻(TMR)效应，讨论了计算机磁随机存储器(MRAM)的最新应用开发。
This paper introduces the giant (GMR) and tunneling (TMR) magnetoresistive effect. The recent application and development of the magnetic random access memory (MRAM) for computer are discussed also.
介绍了巨磁电阻(GMR)及隧道磁电阻(TMR)效应，讨论了计算机磁随机存储器(MRAM)的最新应用开发。
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