There is still a long way to go before MRAM is ready for prime time.
在MRAM存储器达到万事齐备、只欠东风之前还有一段很长的路要走。
Digit and word lines of MRAM structures are subsequently formed.
然后形成MRAM结构的数字线和字线。
A method of forming minimally spaced MRAM structures is disclosed.
本发明公开了一种形成最小间隔MRAM结构的方法。
A magnetic random access memory (MRAM) and a manufacturing method and a programming method thereof are provided.
本发明公开了一种磁性存储器及其制造方法与写入方法。
MRAM is non-volatile memory, it is also power efficient and operates at ultra-high speed, the companies said in a joint statement.
据两家公司的联合声明称，MRAM是一种非易失性存储技术，它具备速度极快和耗电量低的优点。
STT-RAM is a second-generation MRAM technology that is said to solve some of the problems posed by conventional MRAM structures.
通常认为STT-RAM是MRAM技术的第二代技术，这项技术解决了常规MRAM的一些问题。
IBM, collaborating with Germany's Infineon Technologies, has developed a one megabit (million bit) MRAM chip at its laboratories in East Fishkill, New York.
IBM与德国英飞凌技术公司合作，在其位于纽约东费什基尔的实验室开发出一块1兆(百万位)MRAM芯片。
For years, developers of MRAM and other next-generation memory technologies have claimed that they would become the ultimate universal memory and replace today’s memories.
多年以来，无数MRAM及其它多种所谓的“下一代存储技术”的开发厂商曾多次在各种场合鼓吹称他们研发的技术将会取代其它各种现有的存储产品，实现存储市场“天下大一统”的目标，“你们信不信，反正我信”云云。
Firstly, in the concept of spin torque transfer MRAM, we can manipulate the damping constant and saturation magnetization of CoFeB by simply adjusting the capping layers.
首先，在利用自旋极化电流来驱动之磁性记忆体的研究中，发现藉由改变自 由层钴铁硼的覆盖层可以用来调变它的饱和磁化量以及自旋阻尼系数。
Tunneling magnetoresistance (TMR) discovered in magnetic tunneling junction (MTJ) has high sensitivity and adjustable junction resistance, so it has potential to be applied in new MRAM devices.
磁性隧道结结构中发现的隧道磁电阻效应（TMR）灵敏度高、结电阻容易调整，在开发新型MRAM方面极具应用潜力。
This paper introduces the giant (GMR) and tunneling (TMR) magnetoresistive effect. The recent application and development of the magnetic random access memory (MRAM) for computer are discussed also.
介绍了巨磁电阻(GMR)及隧道磁电阻(TMR)效应，讨论了计算机磁随机存储器(MRAM)的最新应用开发。
This paper introduces the giant (GMR) and tunneling (TMR) magnetoresistive effect. The recent application and development of the magnetic random access memory (MRAM) for computer are discussed also.
介绍了巨磁电阻(GMR)及隧道磁电阻(TMR)效应，讨论了计算机磁随机存储器(MRAM)的最新应用开发。
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