Source and drain regions in the semiconductor may define a transistor gate length.
在半导体中的源极区和漏极区可以限定晶体管栅极长度。
The floating gate is positioned between the source and drain regions.
浮动栅极定位于源极区与漏极区之间。
The source electrode and the drain electrode may face each other on the channel layer.
源电极和漏电极可以在沟道层上方相互面对。
The transistor may include a gate structure, a source region, and a drain region.
晶体管包含一栅结构、一源区和一漏区。
The transistor may include a gate structure, a source region, and a drain region.
晶体管包含一栅结构、一源区和一漏区。
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