zero drain source overlap 源漏无重叠
drain-source voltage 漏源电压
drain-source resistance 漏源电阻 ; 漏极源极电阻
drain source voltage 漏源电压
drain source circuit 漏源电路
drain source breakdown voltage 漏源极击穿电压
saturated drain-source current 饱和源漏电流
drain and source diffusion 源漏扩散
source drain diode 源极漏极二极管
The expression of the electrostatic force which drives the island considers the function of the gate electrodes and the initial capacitances besides the effect of the drain-source electrode.
在岛区受到的静电力的表达式中，除了包括漏源电极的作用外，还考虑了双栅电极和系统初始电容值的影响。
The 800v quasi resonant design with lower current peak and lower drain-source voltage during turning on of the MOSFET demonstrates advantages in conducted EMI spectra regarding the primary side.
拥有更低峰值电流和场效应晶体管漏源极开通电压的800伏特准谐振设计展示出一次侧传导电磁干扰降低的优势。
As in case of drain-source voltage this method allows to associate the elements of the drain current waveform with its contribution to the whole spectrum.
就象漏源极电压的例子那样，用这种方法也可以找出漏极电流的哪一部分对电磁干扰频谱产生影响。
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