The expression of the electrostatic force which drives the island considers the function of the gate electrodes and the initial capacitances besides the effect of the drain-source electrode.
在岛区受到的静电力的表达式中，除了包括漏源电极的作用外，还考虑了双栅电极和系统初始电容值的影响。
The 800v quasi resonant design with lower current peak and lower drain-source voltage during turning on of the MOSFET demonstrates advantages in conducted EMI spectra regarding the primary side.
拥有更低峰值电流和场效应晶体管漏源极开通电压的800伏特准谐振设计展示出一次侧传导电磁干扰降低的优势。
As in case of drain-source voltage this method allows to associate the elements of the drain current waveform with its contribution to the whole spectrum.
就象漏源极电压的例子那样，用这种方法也可以找出漏极电流的哪一部分对电磁干扰频谱产生影响。
The mechanical transistor, more properly called a nano-electromechanical systems (NEMS) transistor, creates and destroys the connection between source and drain mechanically.
机械晶体管，更确切地可以称之为纳米电子机械系统（NEMS）晶体管，它可以在源极和漏极之间机械地构建或消除连接。
A semiconductor substrate is provided with a gate structure, and a source and drain on opposing sides of the gate structure.
提供具有栅结构、和具有在所述栅结构相对两侧的源和漏的半导体衬底。
The metal oxide layer may have a gradually changing metal content between the channel layer and the source and the drain.
该金属氧化物层可以在该沟道层与该源极和该漏极之间具有渐变的金属含量。
Recessed regions are etched in a portion of the source and drain.
在所述源和漏的一部分蚀刻凹槽区。
The virtual storage unit line comprises a second conduction type source electrode region and a second conduction type drain electrode region.
虚拟存储单元行包括第二导电型源极区和第二导电型漏极区。
The invention operates a memory cell with charge capturing structure by measuring the current between substrate region and at least one of the source and drain regions of the memory cell.
通过在存储器单元的衬底区域与存储器单元的源极区域及存储 器单元的漏极区域中至少一个之间测量电流，来操作一种具有电荷捕 捉结构的存储器单元。
The DC equation and source drain capacitance formula of the models are given and the application range of three circuit simulation programs is analysed.
在给出多种模型DC方程和源漏电容公式的同时，对三种电路模拟程序的应用范围进行了分析。
In order to make the GaAs FET having the required negative resonator to oscillator, we use the common source configuration and add the appropriate drain open stub microwave line.
为了使砷化镓场效应管具有建立振荡所需的负阻，我们将其配置为共源结构并在漏极添加合适的开路微带线。
Other silicide layers (50.4-50.6) are on the tops of the source, drain and polysilicon gate.
其它硅化物层(50.4 - 50.6)处于源极、漏极和多晶硅栅极的顶部。
The result of calculation indicated that the attenuation of source-drain current caused by the source-drain resistance increased when temperature increased.
对寄生的漏源串联电阻及其温度特性进行了详细探讨，计算结果表明，漏源串联电阻给漏源电流造成的衰减在温度升高后变得很大。
As a switching device, TFT in AMLCD operates in saturation mode. Its source contact is always connected to the data bus (video), and the drain to the pixel electrode.
作为开关器件，AMLCD中的TFT工作在饱和模式，其源极总是连接数据总线(视频)，漏极接像素电极。
A source region and a drain region are formed in the fin at the opposite sides of the gate electrode.
源区和漏区形成在鳍部内栅极的相对侧处。
The invention belongs to the technical field of a microelectronic device, and more particularly discloses an asymmetrical source-drain field effect transistor and a preparation method thereof.
本发明属于微电子器件技术领域，具体公开了一种不对称型源漏场效应晶体管及其制备方法。
Opening sealed subsurface drain line manways to attempt to localize the source of tritium into the system.
打开密封的地下水疏水管道人孔以试图定位进入系统的氚源。
The first important thin film from the thermal oxide group is the gate oxide layer under which a conducting channel can be formed between the source and the drain.
第一个重要的来自热氧化组薄膜是栅氧化层，在它之下，源和漏之间就能形成导电通道。
The processes of the bootstrapping from source and drain are analyzed in detail based on the capacitor model of MOSFET and it is pointed out that the gate capacitance mainly plays a part of coupling.
本文从MOS管电容模型出发详细分析了MOS源漏自举电路的自举物理过程，认为其中负载管栅电容主要起耦合作用。
The source region and the drain region comprise a semiconductor junction mixedly formed by a Schottky junction and a P-N junction.
所述源极区域及漏极区域包括由肖特基结和P-N结混合形成的半导体结。
Through much research and self-reflection, I began to realize the source of my energy drain: depleted will power.
通过很多研究和自我反思，我开始意识到能量流失的根源：意志力耗尽。
The mechanical transistor, more properly called a nano-electromechanical systems transistor, creates and destroys the connection between source and drain mechanically.
机械晶体管，更确切地可以称之为纳米电子机械系统晶体管，它可以在源极和漏极之间机械地构建或消除连接。
Referring to the success of hybrid electric vehicles, a hybrid motorcycle system is feasible, which will play an important role in saving energy source and reducing drain.
参考混合动力电动汽车的成功经验，开发混合动力摩托车十分具有可行性，也势必会在节约能源和降低排放等方面发挥巨大作用。
Every component is a possible source of work and trouble and a drain of processor cycles, disk space, and time; prune anything you can.
每个组件都可能增加管理员的工作量，可能出现问题，会占用处理器周期、磁盘空间和时间；应该尽可能去除不必要的东西。
The MOS model used includes short-channel effects, gate-source capacitance, gate-drain capacitance, and output resistance.
使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。
The new algorithm is applied to the simulation of a class C amplifier, current waveforms at drain and source show good agreement with those obtained by MEDICI transient analysis.
采用该算法仿真典型的C类功率放大器得到电流波形和工业界公认标准器件仿真器MEDICI瞬态模拟得到电流波形比较，显示出很好的一致性。
The channel resistance and the source-drain contact resistance of OTFT were investigated, and the results indicated that the latter is the main factor to affect the electric performances of OTFTs.
研究了有机薄膜场效应晶体管的源漏接触电阻和沟道电阻对器件性能的影响，结果表明接触电阻是影响器件性能的主要因素。
The channel resistance and the source-drain contact resistance of OTFT were investigated, and the results indicated that the latter is the main factor to affect the electric performances of OTFTs.
研究了有机薄膜场效应晶体管的源漏接触电阻和沟道电阻对器件性能的影响，结果表明接触电阻是影响器件性能的主要因素。
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