The 2-D potential model of partial buried oxide VDMOS is obtained in paper.
提出具有部分埋氧结构的功率VDMOS器件的二维势模型。
VDMOS is widely adopted in PDP driver , the damage resulted by secondary breakdown effect can't be ignored .
在PDP驱动电路中的高压功率器件大量采用了VDMOS器件，由二次击穿引起的器件损坏不容忽视。
In order to describe the characteristics of VDMOS device more intuitively, this paper mainly focuses on the gate charge test.
为了更直观地描述低压大电流VDMOS器件特性，对器件栅电荷特性进行了测量和提取。
VDMOS is a new generation of power semiconductor devices, the microelectronics and power electronics technology integration together.
VDMOS是微电子技术和电力电子技术融和起来的新一代功率半导体器件。
A sub circuit model for VDMOS is built according to its physical structure. Parameters and formulas describing the device are also derived from this model.
从VDMOS的物理结构出发建立子电路模型，进而导出描述其交直流特性的参数及模型公式。
A sub circuit model for VDMOS is built according to its physical structure. Parameters and formulas describing the device are also derived from this model.
从VDMOS的物理结构出发建立子电路模型，进而导出描述其交直流特性的参数及模型公式。
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