The 2-D potential model of partial buried oxide VDMOS is obtained in paper.
提出具有部分埋氧结构的功率VDMOS器件的二维势模型。
VDMOS is widely adopted in PDP driver , the damage resulted by secondary breakdown effect can't be ignored .
在PDP驱动电路中的高压功率器件大量采用了VDMOS器件，由二次击穿引起的器件损坏不容忽视。
In small size power VDMOS transistors, the cause of quasi-saturation effect has been investigated and simulated by software.
分析了功率VDMOS晶体管在小尺寸时准饱和效应的成因，并对其进行了理论证明和模拟验证。
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