The 2-D potential model of partial buried oxide VDMOS is obtained in paper.
提出具有部分埋氧结构的功率VDMOS器件的二维势模型。
VDMOS is widely adopted in PDP driver , the damage resulted by secondary breakdown effect can't be ignored .
在PDP驱动电路中的高压功率器件大量采用了VDMOS器件，由二次击穿引起的器件损坏不容忽视。
In small size power VDMOS transistors, the cause of quasi-saturation effect has been investigated and simulated by software.
分析了功率VDMOS晶体管在小尺寸时准饱和效应的成因，并对其进行了理论证明和模拟验证。
In order to describe the characteristics of VDMOS device more intuitively, this paper mainly focuses on the gate charge test.
为了更直观地描述低压大电流VDMOS器件特性，对器件栅电荷特性进行了测量和提取。
VDMOS is a new generation of power semiconductor devices, the microelectronics and power electronics technology integration together.
VDMOS是微电子技术和电力电子技术融和起来的新一代功率半导体器件。
A sub circuit model for VDMOS is built according to its physical structure. Parameters and formulas describing the device are also derived from this model.
从VDMOS的物理结构出发建立子电路模型，进而导出描述其交直流特性的参数及模型公式。
A sub circuit model for VDMOS is built according to its physical structure. Parameters and formulas describing the device are also derived from this model.
从VDMOS的物理结构出发建立子电路模型，进而导出描述其交直流特性的参数及模型公式。
应用推荐