The output power and drain current increase as the gate voltage increases.
输出功率和漏电流增加的栅极电压的增加。
The applied gate voltage gives rise to negative differential resistance (NDR).
通过直流栅电压的作用室温时产生负电阻效应。
With a gate voltage around 2.5v (minimum), output power and drain current increases substantially.
随着周围2.5V的栅极电压(最低)，输出功率和漏电流增加了很多。
Luminescence intensity increased, but the role of the gate voltage to control current is not ideal.
器件的发光强度有所提高，但栅压对载流子的控制作用不理想。
The high precision resistor is composed of three NMOS FETs with controllable gate voltage and aspect ratios.
通过控制各MOS 管的栅电压和宽长比可得到线形度较好的高精度电阻器。
It is showed that the varying gate voltage will change the nonlinear transconductance to get mixer function.
分析了栅压对改变非线性跨导在混频器中的作用。
Over-current protection circuits convert the detecting current into the gate voltage which controls the switch FET.
过流保护电路将检测电流转化为栅压控制开关管；
The drain current model is simplified by an average capacitance formula and a simple expression of channel average mobility with gate voltage.
采用一个随栅压变化的平均电容公式，并用一个简单的解析表达式来描述沟道平均迁移率随栅压的变化关系。
A series resistance not only decreases field-effect mobility but also reduces the gate voltage corresponding to the peak field-effect mobility.
串联电阻不仅会使迁移率降低，还会使峰值场效应迁移率所对应的栅压减小。
Some numerical results of the gate voltage, potential distribution, carriers and electrical field distribution in the channel et. al. were obtained.
得到了作用机制转变时的栅压、势分布以及载流子和电场分布等的数值计算结果。
The same time capacitor C3 is disconnected from the ground so that the load voltage ripple on capacitor C4 does not influence the gate voltage of IGBT Q2.
同时断开电容器C3与地的连接，由此电容器C4上的负载电压波动不会影响IGBTQ2的栅极电压。
By changing the gate voltage, one can adjust the profile and position of the static potential soliton and then have an effective control of charge solitons.
通过调节门电压可以较好地控制静电势孤子的形状及其位置，从而达到对电荷孤子的有效控制。
For a given gate voltage and a higer perpendicular magnetic field, the conductance and the oscillations amplitude induced by spin-obit coupling are increased.
磁场越大同一门电压下电导增加的振幅越大，自旋轨道耦合引起的震荡变的越强，并使探针对电导的影响减小。
Field emission currents were calculated for different apex radii at the gate voltage of 100v, and the results indicated that the field emission largely depends on the apex radius.
计算了在100V门电压下不同顶端半径的场致发射电流。结果显示，场发射对顶端半径有很强的依赖性。
Internal under voltage lockout circuitry for both the high side and low side outputs prevents the IX2120B from turning on the discrete power IGBTs until there is sufficient gate voltage.
下为高侧和低侧输出电压闭锁电路内部防止IX 2120 B从分立功率IGBT转动，直到有足够的栅极电压。
Today Integrated Gate Commutated Thyristors (IGCT) are widely used for different applications such as medium voltage drives (MVD) and interties.
目前，集成门极换向晶闸管（IGCT）被广泛地应用于不同的领域，诸如中电压传动（MVD）和扣联锁电力网等。
The paper gives the current and voltage waveforms of multi GTO devices at turn-off, analyzes and compares the waveforms of gate current and voltage.
给出了多个GTO元件关断时的电流、电压波形。 并对其门极电流、电压波形进行了分析和比较。
The output characteristics also make the AD590 easy to multiplex: the current can be switched by a CMOS multiplexer or the supply voltage can be switched by a logic gate output.
这种输出特性还便于AD590实现多路复用：输出电流可以通过一个CMOS多路复用器切换，或者电源电压可以通过一个逻辑门输出切换。
Its dual UVLO feature protects the power MOSFET from damage in the event that the gate-drive or supply voltage is too low.
器件的双uvlo功能保护功率MOSFET不会因栅极驱动或电源电压过低而损坏。
A deep negative feedback operation amplifier used in band gap reference is a common source and gate folded cascade operation amplifier with a lower offset voltage and a higher gain.
该带隙电压基准源电路中的深度负反馈运算放大器为低失调、高增益的折叠型共源共栅运算放大器。
The capacitive gate transducer has several kinds of exciting voltage forms that affect its performances greatly. But this problem is investigated little.
容栅传感器激励电压形式有若干种，对性能指标有较大影响，但人们对此很少研究。
Through analyzing the topology, control system and protection system of large power high voltage converter equipped with integrated gate commutated thyristor (IGCT), a set of 7.
通过对大功率集成门极换向晶闸管(IGCT)高压变流器的结构、控制系统、保护系统的研究，设计出一套7。
The body region was doped high to increase the back gate threshold voltage.
增加体区掺杂，以提高背栅阈值电压；
When the voltage applied to anode again becomes positive the gate will trigger the SCR on again.
当施加到阳极的电压再次变为正的栅极将再次触发可控硅上。
Electrons are injected into the floating gate by applying a high voltage to the second impurity diffusion layer in capacitive coupling with the floating gate.
通过在与浮栅电容耦合的第二杂质扩散层上施加高电压对浮栅注入电子。
A transistor with a thin gate oxide being driven by too high of a voltage.
一个用薄栅氧化层电晶体被太多的驱动电压高。
The smaller feature size means thinner gate oxide, smaller voltage that gate oxide can endure.
因为特征尺寸的缩小意味着栅氧层的变薄，更小的电压就能够击穿器件的栅氧层；
In addition, the threshold voltage is capable of being finely tuned with a proper gate bias .
除此之外，由于强烈的闸极耦合效应，在分离的上闸极加上适当的偏压，便可精确地调控临限电压。
The working properties depend on the gate bias voltage and the structure of pectinate Al electrode.
其工作特性依赖于栅极电压和梳状铝电极的结构。
The reason of appearing peak voltage in IGBT(insulated gate bipolar transistor)absorber is discussed. Absorbers corrcsponding to different powers are proposed for the 3rd generation IGBT.
探讨了IGBT功率电路尖峰电压产生的原因，并针对第三代IGBT，给出了适应不同功率的吸收电路。
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