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The output power and drain current increase as the gate voltage increases.
输出功率和漏电流增加的栅极电压的增加。
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The body region was doped high to increase the back gate threshold voltage.
增加体区掺杂，以提高背栅阈值电压；
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Apply a reverse voltage to gate g.
外加反向电压至闸极g。
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Apply a reverse voltage to gate g.
外加反向电压至闸极g。
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