Luminescence intensity increased, but the role of the gate voltage to control current is not ideal.
器件的发光强度有所提高，但栅压对载流子的控制作用不理想。
The high precision resistor is composed of three NMOS FETs with controllable gate voltage and aspect ratios.
通过控制各MOS 管的栅电压和宽长比可得到线形度较好的高精度电阻器。
Over-current protection circuits convert the detecting current into the gate voltage which controls the switch FET.
过流保护电路将检测电流转化为栅压控制开关管；
The drain current model is simplified by an average capacitance formula and a simple expression of channel average mobility with gate voltage.
采用一个随栅压变化的平均电容公式，并用一个简单的解析表达式来描述沟道平均迁移率随栅压的变化关系。
A series resistance not only decreases field-effect mobility but also reduces the gate voltage corresponding to the peak field-effect mobility.
串联电阻不仅会使迁移率降低，还会使峰值场效应迁移率所对应的栅压减小。
The same time capacitor C3 is disconnected from the ground so that the load voltage ripple on capacitor C4 does not influence the gate voltage of IGBT Q2.
同时断开电容器C3与地的连接，由此电容器C4上的负载电压波动不会影响IGBTQ2的栅极电压。
By changing the gate voltage, one can adjust the profile and position of the static potential soliton and then have an effective control of charge solitons.
通过调节门电压可以较好地控制静电势孤子的形状及其位置，从而达到对电荷孤子的有效控制。
Field emission currents were calculated for different apex radii at the gate voltage of 100v, and the results indicated that the field emission largely depends on the apex radius.
计算了在100V门电压下不同顶端半径的场致发射电流。结果显示，场发射对顶端半径有很强的依赖性。
Field emission currents were calculated for different apex radii at the gate voltage of 100v, and the results indicated that the field emission largely depends on the apex radius.
计算了在100V门电压下不同顶端半径的场致发射电流。结果显示，场发射对顶端半径有很强的依赖性。
应用推荐