• It is found that the barrier width is thinned by the surface defects with high density to enhance the hot electron tunneling.

    发现表面高密度缺陷势垒层厚度显著增强热电子隧穿过程。

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  • It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post-irradiation recovery.

    假设隧道电子进入氧化层界面建立辐射效应恢复机理。

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  • It shows that the bias in the post-irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate.

    大小以及隧道电子效应建立界面占比例的不同影响器件的恢复

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  • Three kinds of different new approaches to construct nanometer sized double barrier tunneling junctions for room temperature single electron tunneling studies were reported.

    利用针尖修饰及纳米组装技术,采用不同方法构造出串联穿结构。

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  • It is found that the electrons may be transferred into delocalized states with high energy and transited to surface states through hot electron tunneling under high electron concentration.

    发现电子密度下电子向量子限制较弱的退局域转移。同时还经由热电子穿跃迁表面

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  • We have used STM to investigate the electron tunneling spectroscopy, as well as the tunneling barrier heights, in two kinds of iron oxides prepared differently on iron single crystal surfaces.

    报道利用扫描隧道显微术(STM金属表面氧化物层进行电子隧道研究的结果。

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  • The generation mechanisms of these physical phenomena of Coulomb blockade, Coulomb staircase, single electron tunneling were described with single electron transistor(SET) as the research object.

    电子晶体管研究对象,系统阐述库仑阻塞、库仑台阶、单电子隧穿等物理现象产生机理

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  • The electron spin dependent tunneling and susceptibility are studied.

    研究了电子自旋相关隧穿极化

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  • The gate current is produced by the tunneling, the electron surmounting and percolation.

    发现器件电流不是单一的隧穿引起,同时还有电子翻越渗透

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  • The electron states and tunneling transmission probability for a double barrier heterostructure system containing scattering centers are solved by using the single-band double-valley theory.

    本文从单带谷模型出发研究了电子量子阱内遭到散射时电子状态隧穿几率的变化。

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  • We study the spin Hall conductivity and tunneling spin current in the bilayer two-dimensional electron gas.

    我们研究双层二维电子中的霍尔电导率以及隧穿自旋

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  • Based on the orthodox theory, a model of a single electron transistor (SET) of metallic tunneling junctions is built using the master equation method.

    正统理论基础使用方程建立了金属电子晶体管的器件模型和算法流程。

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  • In moderate field region, traps can be filled by both FN current and direct tunneling of electron into the traps. It results in a quasi-saturation in the leakage current.

    中等电场区域注入电子通过FN电流直接隧穿到达能填充陷阱,从而使电流产生准态饱和。

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  • Then the perturbative description of the interaction between a single electron and the laser field can be replaced by the tunneling ionization.

    此时单个电子相互作用描述可以用隧穿描述取代

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  • In this paper, optical microscopy (OM), scanning electron microscopy (SEM) and scanning tunneling microscopy (STM) are used to investigate the microstructure of recorded organic thin film.

    通过光学显微镜(OM),扫描电镜(SEM)扫描隧道显微镜(STM)观察了光记录有机薄膜微区结构。

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  • In this paper, optical microscopy (OM), scanning electron microscopy (SEM) and scanning tunneling microscopy (STM) are used to investigate the microstructure of recorded organic thin film.

    通过光学显微镜(OM),扫描电镜(SEM)扫描隧道显微镜(STM)观察了光记录有机薄膜微区结构。

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