It is found that the barrier width is thinned by the surface defects with high density to enhance the hot electron tunneling.
发现表面高密度缺陷减薄了势垒层厚度，显著增强了热电子隧穿过程。
It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post-irradiation recovery.
假设隧道电子从硅进入氧化层和界面态的建立是辐射效应的恢复机理。
It is found that the electrons may be transferred into delocalized states with high energy and transited to surface states through hot electron tunneling under high electron concentration.
发现在高电子密度下电子会向量子限制较弱的退局域态转移。同时还经由热电子隧穿而跃迁到表面态。
The generation mechanisms of these physical phenomena of Coulomb blockade, Coulomb staircase, single electron tunneling were described with single electron transistor(SET) as the research object.
以单电子晶体管为研究对象，系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。
The generation mechanisms of these physical phenomena of Coulomb blockade, Coulomb staircase, single electron tunneling were described with single electron transistor(SET) as the research object.
以单电子晶体管为研究对象，系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。
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