... electron tunneling 电子隧道效应 ; 电子穿隧 tunneling electron 隧道电子 tunneling machine 隧道钻机 ; 岩石隧道掘进联合机 ; 隧道开挖机 ...
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single electron tunneling 单电子隧道贯穿
coherent electron tunneling 相干电子隧道
coulomb blockade and electron tunneling coulomb阻塞及电子隧穿
hot electron tunneling 热电子隧穿
electron tunneling effect 电子隧道效应
normal electron tunneling 正常电子隧穿
inelastic electron tunneling 非弹性电子隧道
tunneling electron 隧道电子
single electron tunneling effect 单电子隧穿效应
Long period of electron tunneling causes the devices heat,which will impact seriously on the stability of the devices.
电子隧穿过程将引起器件发热,从而会影响到器件的工作稳定性。
参考来源 - 富硅氮化硅薄膜的光电性能研究·2,447,543篇论文数据，部分数据来源于NoteExpress
It is found that the barrier width is thinned by the surface defects with high density to enhance the hot electron tunneling.
发现表面高密度缺陷减薄了势垒层厚度，显著增强了热电子隧穿过程。
It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post-irradiation recovery.
假设隧道电子从硅进入氧化层和界面态的建立是辐射效应的恢复机理。
It is found that the electrons may be transferred into delocalized states with high energy and transited to surface states through hot electron tunneling under high electron concentration.
发现在高电子密度下电子会向量子限制较弱的退局域态转移。同时还经由热电子隧穿而跃迁到表面态。
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