Long period of electron tunneling causes the devices heat,which will impact seriously on the stability of the devices.
电子隧穿过程将引起器件发热,从而会影响到器件的工作稳定性。
参考来源 - 富硅氮化硅薄膜的光电性能研究·2,447,543篇论文数据，部分数据来源于NoteExpress
It is found that the barrier width is thinned by the surface defects with high density to enhance the hot electron tunneling.
发现表面高密度缺陷减薄了势垒层厚度，显著增强了热电子隧穿过程。
It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post-irradiation recovery.
假设隧道电子从硅进入氧化层和界面态的建立是辐射效应的恢复机理。
It shows that the bias in the post-irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate.
压的大小以及隧道电子效应与建立的界面态所占比例的不同影响器件的恢复率。
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