... electron tunneling 电子隧道效应 ; 电子穿隧 tunneling electron 隧道电子 tunneling machine 隧道钻机 ; 岩石隧道掘进联合机 ; 隧道开挖机 ...
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single electron tunneling 单电子隧道贯穿
coherent electron tunneling 相干电子隧道
coulomb blockade and electron tunneling coulomb阻塞及电子隧穿
hot electron tunneling 热电子隧穿
electron tunneling effect 电子隧道效应
normal electron tunneling 正常电子隧穿
inelastic electron tunneling 非弹性电子隧道
tunneling electron 隧道电子
single electron tunneling effect 单电子隧穿效应
Long period of electron tunneling causes the devices heat,which will impact seriously on the stability of the devices.
电子隧穿过程将引起器件发热,从而会影响到器件的工作稳定性。
参考来源 - 富硅氮化硅薄膜的光电性能研究·2,447,543篇论文数据，部分数据来源于NoteExpress
It is found that the barrier width is thinned by the surface defects with high density to enhance the hot electron tunneling.
发现表面高密度缺陷减薄了势垒层厚度，显著增强了热电子隧穿过程。
It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post-irradiation recovery.
假设隧道电子从硅进入氧化层和界面态的建立是辐射效应的恢复机理。
It shows that the bias in the post-irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate.
压的大小以及隧道电子效应与建立的界面态所占比例的不同影响器件的恢复率。
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