The spectra of the main elements of the drain-source voltage can be found in Fig. 20.
图20描述了漏源极电压主要原理产生的电磁干扰频谱。
This can be explained by two major differences of the 800v drain-source voltage waveform.
这里有两条理由可以解释800伏特漏源极电压波形的两个差异。
The superposition of all these elements results in a typical drain-source voltage shown in Fig. 16.
把这些原理按时序整合呈现出图16所示的典型漏源极电压。
The hard switching approach (as shown in Fig. 26) doesn't consider the minimum drain-source voltage.
硬开关(图26所示)几乎不考虑漏源极电压的最小值。
The decrease of the drain-source voltage or bus voltage affects the entire spectrum evenly according to Fourier theory.
降低漏源极直流母线电压影响干扰信号按傅立叶展开式的全部频带。
The drain-source voltage (Fig. 28) starts oscillating at the end of the flyback phase and reaching the minimum of 100V when the MOSFET turns on.
漏源极电压（图28）在反射过程结束后并减小到100伏特时场效应晶体管导通。
As in case of drain-source voltage this method allows to associate the elements of the drain current waveform with its contribution to the whole spectrum.
就象漏源极电压的例子那样，用这种方法也可以找出漏极电流的哪一部分对电磁干扰频谱产生影响。
The expression of the electrostatic force which drives the island considers the function of the gate electrodes and the initial capacitances besides the effect of the drain-source electrode.
在岛区受到的静电力的表达式中，除了包括漏源电极的作用外，还考虑了双栅电极和系统初始电容值的影响。
The 800v quasi resonant design with lower current peak and lower drain-source voltage during turning on of the MOSFET demonstrates advantages in conducted EMI spectra regarding the primary side.
拥有更低峰值电流和场效应晶体管漏源极开通电压的800伏特准谐振设计展示出一次侧传导电磁干扰降低的优势。
When the current applied by the gate is high enough, electrons flow through the channel between the source and drain electrodes.
当由栅极施加的电流足够强的时候，电子会在源极和栅极之间进行流动。
Every component is a possible source of work and trouble and a drain of processor cycles, disk space, and time; prune anything you can.
每个组件都可能增加管理员的工作量，可能出现问题，会占用处理器周期、磁盘空间和时间；应该尽可能去除不必要的东西。
The mechanical transistor, more properly called a nano-electromechanical systems (NEMS) transistor, creates and destroys the connection between source and drain mechanically.
机械晶体管，更确切地可以称之为纳米电子机械系统（NEMS）晶体管，它可以在源极和漏极之间机械地构建或消除连接。
Opening sealed subsurface drain line manways to attempt to localize the source of tritium into the system.
打开密封的地下水疏水管道人孔以试图定位进入系统的氚源。
Source and drain regions in the semiconductor may define a transistor gate length.
在半导体中的源极区和漏极区可以限定晶体管栅极长度。
The floating gate is positioned between the source and drain regions.
浮动栅极定位于源极区与漏极区之间。
The DC equation and source drain capacitance formula of the models are given and the application range of three circuit simulation programs is analysed.
在给出多种模型DC方程和源漏电容公式的同时，对三种电路模拟程序的应用范围进行了分析。
The first important thin film from the thermal oxide group is the gate oxide layer under which a conducting channel can be formed between the source and the drain.
第一个重要的来自热氧化组薄膜是栅氧化层，在它之下，源和漏之间就能形成导电通道。
The properties of the carrier transport in the regions of source, drain contact and channel are analyzed in detail.
详细地分析了源、漏电极接触区和沟通区内载流子的输运特性。
A convenient modulator can be formed by an emitter-follower transistor having its emitter region connected to the source or drain of the field-effect transistor.
方便调节剂能形成一个射极跟随晶体管发射极地区，其连接到来源或流失的场效应晶体管。
The mechanical transistor, more properly called a nano-electromechanical systems transistor, creates and destroys the connection between source and drain mechanically.
机械晶体管，更确切地可以称之为纳米电子机械系统晶体管，它可以在源极和漏极之间机械地构建或消除连接。
In order to make the GaAs FET having the required negative resonator to oscillator, we use the common source configuration and add the appropriate drain open stub microwave line.
为了使砷化镓场效应管具有建立振荡所需的负阻，我们将其配置为共源结构并在漏极添加合适的开路微带线。
At the same time more than in 5 times is reduced current leak from the source to the drain, ie is reduced the energy consumption of transistor.
在同一时间，多在5倍，是减少泄漏电流，从源头上向外流，即是减少了能源消耗的晶体管。
As a switching device, TFT in AMLCD operates in saturation mode. Its source contact is always connected to the data bus (video), and the drain to the pixel electrode.
作为开关器件，AMLCD中的TFT工作在饱和模式，其源极总是连接数据总线(视频)，漏极接像素电极。
The metal oxide layer may have a gradually changing metal content between the channel layer and the source and the drain.
该金属氧化物层可以在该沟道层与该源极和该漏极之间具有渐变的金属含量。
A semiconductor substrate is provided with a gate structure, and a source and drain on opposing sides of the gate structure.
提供具有栅结构、和具有在所述栅结构相对两侧的源和漏的半导体衬底。
Other silicide layers (50.4-50.6) are on the tops of the source, drain and polysilicon gate.
其它硅化物层(50.4 - 50.6)处于源极、漏极和多晶硅栅极的顶部。
The invention operates a memory cell with charge capturing structure by measuring the current between substrate region and at least one of the source and drain regions of the memory cell.
通过在存储器单元的衬底区域与存储器单元的源极区域及存储 器单元的漏极区域中至少一个之间测量电流，来操作一种具有电荷捕 捉结构的存储器单元。
The virtual storage unit line comprises a second conduction type source electrode region and a second conduction type drain electrode region.
虚拟存储单元行包括第二导电型源极区和第二导电型漏极区。
Recessed regions are etched in a portion of the source and drain.
在所述源和漏的一部分蚀刻凹槽区。
Recessed regions are etched in a portion of the source and drain.
在所述源和漏的一部分蚀刻凹槽区。
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