... monocrystalline filament 单晶长丝 monocrystalline gallium 单晶镓 monocrystalline reconversion 单晶的再结晶 ...
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砷化镓单晶 arsenide gallium monocrystal ; Gallium arsenide single crystal
磷化镓单晶 Gallium phosphide single crystal ; gallium phosphide monocrystal
拉单晶专用镓掺杂剂 Ga Dopant
砷化镓铟单晶 indium gallium arsenide single crystal
锑化镓单晶 gallium antimonide single crystal
高绝缘单晶氮化镓薄膜 Highly insulating monocrystalline gallium nitride thin films
磷化镓铟单晶 indium gallium phosphide single crystal
磷化铝镓单晶 gallium aluminum phosphide single crystal
水平砷化镓单晶 horizontal Bridgman GaAs single crystal
为了获得高质量半绝缘砷化镓单晶片，有必要降低微缺陷密度。
To obtain high quality semi-insulating GaAs wafers, it is necessary to decrease microscopic defect density.
在包含含有氮气的混合气体b的气氛下，在总压为300气压以上、2000气压以下的压力下，生长氮化镓单晶。
Gallium nitride single crystal is grown in atmosphere composed of gases mixture 'B' containing nitrogen gas at a pressure of 300 atms or higher and 2000 atms or lower.
用电子显微镜研究了压痕诱发砷化镓单晶中的塑性变形。
Plastic deformation induced by indentation in a GaAs single crystal was investigated using electron microscopy in the present experiment.
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