... 砷化镓单晶 arsenide gallium monocrystal ; gallium arsenide single crystal 磷化镓单晶 gallium phosphide monocrystal 拉单晶专用镓掺杂剂 Ga Dopant ...
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中国最大的综合性文献数据库 -维普资讯 关键词: 砷化镓单晶 压痕法 温度变化 显微硬度[gap=1414]Key words: gallium arsenide single crystal; indentation; temperature change; micro-hardness
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用电子显微镜研究了压痕诱发砷化镓单晶中的塑性变形。
Plastic deformation induced by indentation in a GaAs single crystal was investigated using electron microscopy in the present experiment.
为了获得高质量半绝缘砷化镓单晶片，有必要降低微缺陷密度。
To obtain high quality semi-insulating GaAs wafers, it is necessary to decrease microscopic defect density.
常用的本质半导体是硅、锗以及砷化镓等的单晶。
Some common intrinsic semiconductors are single crystals of silicon, germanium, and gallium arsenide.
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