lateral PNP transistor 横向PNP晶体管
Laterial PNP transistor 横向PNP晶体管
Vertical PNP Transistor 纵向PNP管
substrate PNP transistor 衬底寄生PNP管 ; 衬底
PNP Transistor Darlington 达林顿晶体管
PNP Transistor Voltage Input 电压输入
high-performance PNP transistor 高性能PNP管
floating-collector pnp transistor 悬浮集电极pnp管
alloy junction germanium pnp transistor 锗pnp合金三极管
In this paper the two-dimension analysis is given for transversal PNP Transistor.
本文对横向PN P晶体管进行了二维分析。
Major conclusion is: it is possible to achieve ideal vertical PNP transistor by appropriately re-arranging process steps without affecting the original structure.
主要结论为通过合理地安排工艺步骤，能够在对原有结构不产生影响的情况下，得到性能令人满意的纵向PN P晶体管。
We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collector region including the effect of buried-layer.
本文从包括埋层影响的集区杂质分布出发，求出了寄生PNP晶体管的共基极电流放大系数。
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