In this paper the two-dimension analysis is given for transversal PNP Transistor.
本文对横向PN P晶体管进行了二维分析。
Major conclusion is: it is possible to achieve ideal vertical PNP transistor by appropriately re-arranging process steps without affecting the original structure.
主要结论为通过合理地安排工艺步骤，能够在对原有结构不产生影响的情况下，得到性能令人满意的纵向PN P晶体管。
We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collector region including the effect of buried-layer.
本文从包括埋层影响的集区杂质分布出发，求出了寄生PNP晶体管的共基极电流放大系数。
Per above said, it is possible to improve PNP transistor by modifying the existing structure, increasing process complexity while maintaining original device's performance.
基于上述分析，在对传统的结构进行修改之后，以增加工艺复杂性为代价，在保证原有结构的情况下，能够得到性能令人满意的纵向PN P晶体管。
The effective conversion transconductance of transistor converters using a PNP transistor operated at different oscillatory conditions and at various signal frequencies are studied.
研究晶体管变频器在各种振荡状况下及不同讯号频率时对有效变频跨导的影响。
Regardless of type NPN or PNP-type tubes, the internal transistor has three areas, namely, the launch area, base, collector area, the three areas form two PN junction.
无论npn型还是PNP型管，三极管内部均有三个区、即发射区、基区、集电区，三个区形成两个PN结。
PNP epitaxial silicon transistor. Low frequency power amplifier.
PNP外延硅晶体管。低频功率放大器。
As a result, output character of PNP bipolar transistor is barely satisfying.
这些原因导致了PNP双极晶体管的输出性能差强人意。
Lateral channel field-controlled thyristor is a combination of a NJFET and a PNP bipolar transistor.
水平沟道场控晶闸管是由结型场效应晶体管和双极型晶体管复合构成的一种晶闸管。
The results show that the effect of the parasitic PNP, transistor;. Is so serious under the condition of thin epitaxy that it can not be neglected even if the technology of doping gold is used.
结果指出，在薄外延条件下，寄生pnp效应严重，即使采用掺金工艺，寄生pnp效应也不能忽略不计。
The results show that the effect of the parasitic PNP, transistor;. Is so serious under the condition of thin epitaxy that it can not be neglected even if the technology of doping gold is used.
结果指出，在薄外延条件下，寄生pnp效应严重，即使采用掺金工艺，寄生pnp效应也不能忽略不计。
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