The design and analysis of Vertical PNP Transistor was accomplished through the relationship between carriers lifetime of epitaxy layer and current gain, rate of surface combination and leakage current, carriers lifetime of epitaxy layer and switch speed.
从外延层载流子寿命与晶体管放大倍数，表面复合率与漏电流，以及外延层载流子寿命与晶体管开关速度等方面对于输出级纵向PNP管进行了较为详细的设计与分析，达到了电路中对输出级纵向PNP管主要参数指标的要求。
参考来源 - 低漏电流功率开关集成电路·2,447,543篇论文数据，部分数据来源于NoteExpress
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