...结；磁隧道结；磁量子点接触；磁电阻；电导量子化 [gap=1184]Keywords：Double spin-filter junction; Magnetic tunnel junction; Magnetic quantum point contact; Magnetoresistance; Conductance quantization ..
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... magnetic susceptibility 磁化率 magnetic tunnel junction (MTJ) 磁性隧道连接 magnetic variation 磁变 ...
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In Chapter 4, we succeeded in the fabrication of high-quality MgO magnetic tunnel junction. In our full structure MgO junction, the room temperature TMR signal is as high as 188%.
第四章中我们成功制备了高质量的MgO隧道结。
参考来源 - 磁性自旋阀和隧道结的制备及相关性能研究·2,447,543篇论文数据，部分数据来源于NoteExpress
The memory element includes a magnetic tunnel junction (MTJ) element and an electrode.
存储器组件包括一磁穿隧接 面（MTJ）组件与一电极。
More particularly, the MTJ structure may be on the semiconductor substrate, and the digit line may be adjacent the magnetic tunnel junction structure.
更具体，MT J结构可以在半导体衬底上，以及数字线可以邻近磁隧道结结构。
A magnetic random access memory device may include a semiconductor substrate, a magnetic tunnel junction (MTJ) structure, a contact plug, and a digit line.
提供用于操作包括存储单元的磁随机存取存储器件的方法，该存储单元具有在衬底上的磁隧道结结构的。
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