The memory element includes a magnetic tunnel junction (MTJ) element and an electrode.
存储器组件包括一磁穿隧接 面（MTJ）组件与一电极。
More particularly, the MTJ structure may be on the semiconductor substrate, and the digit line may be adjacent the magnetic tunnel junction structure.
更具体，MT J结构可以在半导体衬底上，以及数字线可以邻近磁隧道结结构。
A magnetic random access memory device may include a semiconductor substrate, a magnetic tunnel junction (MTJ) structure, a contact plug, and a digit line.
提供用于操作包括存储单元的磁随机存取存储器件的方法，该存储单元具有在衬底上的磁隧道结结构的。
We have developed a method that uses a magnetic double barrier tunnel junction to study spin flip scattering in nanometer sized spacer layers near the ballistic limit.
文章作者提出了一种使用双势垒磁性隧道结来研究纳米尺度结构中弹道区域的自旋翻转散射效应的新方法。
We have developed a method that uses a magnetic double barrier tunnel junction to study spin flip scattering in nanometer sized spacer layers near the ballistic limit.
文章作者提出了一种使用双势垒磁性隧道结来研究纳米尺度结构中弹道区域的自旋翻转散射效应的新方法。
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